Datasheet IRG4PH40UDPbF (International Rectifier) - 3
| Hersteller | International Rectifier |
| Beschreibung | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Seiten / Seite | 11 / 3 — Fig. 1. Fig. 2. Fig. 3 |
| Dateiformat / Größe | PDF / 689 Kb |
| Dokumentensprache | Englisch |
Fig. 1. Fig. 2. Fig. 3
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Textversion des Dokuments
IRG4PH40UDPbF 25 For both: Duty cycle: 50% 20 T J = 125°C T = 90°C sink G ate drive as specified P ow er Dis sipation = 35 W 15 S qua re w av e: 60% of rated voltage 10 I LOAD CURRENT (A) 5 Id e a l d io d e s 00.1 1 10 100 f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 T = 150 C o J T = 150 C o J 10 10 T = 25 C o J T = 25 C o J I , Collector-to-Emitter Current (A) C GE I , Collector-to-Emitter Current (A) C V = 15V 20µs PULSE WIDTH 1 V = 50V CC 5µs PULSE WIDTH 1 10 1 5 6 7 8 9 10 V , Collector-to-Emitter Voltage (V) CE V , Gate-to-Emitter Voltage (V) GE
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics www.irf.com 3
Fig. 1
- Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 T = 150 C o J T = 150 C o J 10 10 T = 25 C o J T = 25 C o J I , Collector-to-Emitter Current (A) C GE I , Collector-to-Emitter Current (A) C V = 15V 20µs PULSE WIDTH 1 V = 50V CC 5µs PULSE WIDTH 1 10 1 5 6 7 8 9 10 V , Collector-to-Emitter Voltage (V) CE V , Gate-to-Emitter Voltage (V) GE
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics www.irf.com 3