Datasheet IRG4PH40UD2-EP (Infineon) - 3
| Hersteller | Infineon |
| Beschreibung | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Seiten / Seite | 11 / 3 — Fig. 1. Fig. 2. Fig. 3 |
| Revision | 01_00 |
| Dateiformat / Größe | PDF / 242 Kb |
| Dokumentensprache | Englisch |
Fig. 1. Fig. 2. Fig. 3
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Textversion des Dokuments
IRG4PH40UD2-EP 50 45 Square wave: 60% of rated 40 voltage 35 ) I A ( 30 tnerr 25 Ideal diodes u C d 20 a o L For both: 15 Duty cycle : 50% Tj = 125°C 10 Tsink = 90°C Gate drive as specified 5 Power Dissipation = 35W 0 0.1 1 10 100 f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 ) rrent (A u T = 150 C o J o itter C T = 150 C J m 10 10 T = 25 C o J T = 25 C o J llector-to-E o I , Collector-to-Emitter Current (A) C I , C C V = 15V GE V = 5 CC 0V 20µs PULSE WIDTH 5µs PULSE WIDTH 1 1 1 10 5 6 7 8 9 10 V , Collector-to-Emitter Voltage (V) V , Gate-to-Emitter Voltage (V) CE GE
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics www.irf.com 3
Fig. 1
- Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 ) rrent (A u T = 150 C o J o itter C T = 150 C J m 10 10 T = 25 C o J T = 25 C o J llector-to-E o I , Collector-to-Emitter Current (A) C I , C C V = 15V GE V = 5 CC 0V 20µs PULSE WIDTH 5µs PULSE WIDTH 1 1 1 10 5 6 7 8 9 10 V , Collector-to-Emitter Voltage (V) V , Gate-to-Emitter Voltage (V) CE GE
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics www.irf.com 3