Datasheet H11AV1M, H11AV1AM, H11AV2M, H11AV2AM (Fairchild) - 3

H11A Electrical Characteristics
(TA = 25°C unless otherwise specified.)
V1M, Individual Component Characteristics H11A Symbol Parameter Test Conditions Min. Typ.* Max. Unit EMITTER
V Input Forward Voltage (I = 10mA) T = 25°C 0.8 1.18 1.5 V
V1AM,
F F A TA = -55°C 0.9 1.28 1.7 TA = 100°C 0.7 1.05 1.4
H11A
IR Reverse Leakage Current VR = 6.0V 10 µA
DETECTOR V2M,
BVCEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IF = 0 70 100 V BVCBO Collector-Base Breakdown Voltage IC = 100µA, IF = 0 70 120 V
H11A
BVECO Emitter-Collector Breakdown Voltage IE = 100µA, IF = 0 7 10 V ICEO Collector-Emitter Dark Current VCE = 10V, IF = 0 1 50 nA
V2AM — Phototransistor Optocoupler
ICBO Collector-Base Dark Current VCB = 10V 0.5 nA CCE Capacitance VCE = 0V, f = 1MHz 8 pF
Transfer Characteristics Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit DC CHARACTERISTIC
CTR Current Transfer Ratio, IF = 10mA, VCE = 10V H11AV1M 100 300 % Collector to Emitter H11AV1AM H11AV2M 50 H11AV2AM VCE (SAT) Collector-Emitter IC = 2mA, IF = 20mA All 0.4 V Saturation Voltage
AC CHARACTERISTIC
TON Non-Saturated Turn-on IC = 2mA, VCC = 10V, All 15 µs Time R Ω L = 100 (Fig. 11) T Non Saturated Turn-off I = 2mA, V = 10V, All 15 µs
s
ON C CC Time R Ω L = 100 (Fig. 11)
Isolation Characteristics Symbol Parameters Test Conditions Min. Typ.* Max. Units
VISO Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 VAC(pk) CISO Isolation Capacitance VI-O = 0V, f = 1MHz 0.2 2 pF R 11 Ω ISO Isolation Resistance VI-O = 500 VDC 10 *Typical values at TA = 25°C ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2 3