Datasheet SiHH070N60EF (Vishay) - 4
| Hersteller | Vishay |
| Beschreibung | EF Series Power MOSFET With Fast Body Diode |
| Seiten / Seite | 9 / 4 — SiHH070N60EF. Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage. … |
| Dateiformat / Größe | PDF / 184 Kb |
| Dokumentensprache | Englisch |
SiHH070N60EF. Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage. Fig. 10 - Maximum Drain Current vs. Case Temperature
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SiHH070N60EF
www.vishay.com Vishay Siliconix Axis Title Axis Title 12 10000 40 10000 V = 480 V DS ) V = 300 V 35 DS (V V = 120 V DS 9 30 ) ltage o 1000 1000 25 ne rrent (A ine ine ne u ine ine 6 ource V 20 C 1st l 2nd l n 2nd li 1st l 2nd l 2nd li rai 15 100 D 100 ate-to-S - G 3 I D 10 - GSV 5 0 10 0 10 0 15 30 45 60 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Case Temperature (°C) g C
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature
Axis Title Axis Title 100 10000 e 1.1 10000 g a lt 1.08 ) Vo (A T = 150 °C J n 1.06 w o d k 1.04 10 1000 a 1000 e ed) 1.02 ne Br liz ne ine ine a ine ine rain Current T = 25 °C J 1 rce u 1st l 2nd li 2nd l 1st l 2nd li 2nd l (Norm 0.98 -So 1 100 100 -to everse D 0.96 in R - ra D 0.94 I = 20mA I SD - D V = 0 V DS 0.92 GS V 0.1 10 0.9 10 0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 V - Source-Drain Voltage (V) T - Junction Temperature (°C) SD J
Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 11 - Temperature vs. Drain-to-Source Voltage
Axis Title 1000 10000 Operation in this area limited by RDS(on) 100 I limited DM ) 1000 10 Limited by R a DS(on) ne rrent (A u 100 µs ine ine C n 1st l 2nd l 2nd li 1 rai D 100 - 1 ms I D 0.1 T = 25 °C, C 10 ms T = 150 °C, J single pulse BVDSS limited 0.01 10 1 10 100 1000 V - Drain-to-Source Voltage (V) DS
Fig. 9 - Maximum Safe Operating Area Note
a. VGS > minimum VGS at which RDS(on) is specified S20-0109-Rev. B, 02-Mar-2020
4
Document Number: 92290 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix Axis Title Axis Title 12 10000 40 10000 V = 480 V DS ) V = 300 V 35 DS (V V = 120 V DS 9 30 ) ltage o 1000 1000 25 ne rrent (A ine ine ne u ine ine 6 ource V 20 C 1st l 2nd l n 2nd li 1st l 2nd l 2nd li rai 15 100 D 100 ate-to-S - G 3 I D 10 - GSV 5 0 10 0 10 0 15 30 45 60 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Case Temperature (°C) g C
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature
Axis Title Axis Title 100 10000 e 1.1 10000 g a lt 1.08 ) Vo (A T = 150 °C J n 1.06 w o d k 1.04 10 1000 a 1000 e ed) 1.02 ne Br liz ne ine ine a ine ine rain Current T = 25 °C J 1 rce u 1st l 2nd li 2nd l 1st l 2nd li 2nd l (Norm 0.98 -So 1 100 100 -to everse D 0.96 in R - ra D 0.94 I = 20mA I SD - D V = 0 V DS 0.92 GS V 0.1 10 0.9 10 0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 V - Source-Drain Voltage (V) T - Junction Temperature (°C) SD J
Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 11 - Temperature vs. Drain-to-Source Voltage
Axis Title 1000 10000 Operation in this area limited by RDS(on) 100 I limited DM ) 1000 10 Limited by R a DS(on) ne rrent (A u 100 µs ine ine C n 1st l 2nd l 2nd li 1 rai D 100 - 1 ms I D 0.1 T = 25 °C, C 10 ms T = 150 °C, J single pulse BVDSS limited 0.01 10 1 10 100 1000 V - Drain-to-Source Voltage (V) DS
Fig. 9 - Maximum Safe Operating Area Note
a. VGS > minimum VGS at which RDS(on) is specified S20-0109-Rev. B, 02-Mar-2020
4
Document Number: 92290 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000