Datasheet 2N3055, MJ2955 (ON Semiconductor)
| Hersteller | ON Semiconductor |
| Beschreibung | Complementary Silicon Power Transistors |
| Seiten / Seite | 5 / 1 — Preferred Device. Features. http://onsemi.com. 15 AMPERE. POWER … |
| Revision | 6 |
| Dateiformat / Größe | PDF / 123 Kb |
| Dokumentensprache | Englisch |
Preferred Device. Features. http://onsemi.com. 15 AMPERE. POWER TRANSISTORS. COMPLEMENTARY SILICON. 60 VOLTS, 115 WATTS
Modelllinie für dieses Datenblatt
Textversion des Dokuments
2N3055(NPN), MJ2955(PNP)
Preferred Device
Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.
Features http://onsemi.com
• DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −
15 AMPERE
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc •
POWER TRANSISTORS
Excellent Safe Operating Area •
COMPLEMENTARY SILICON
Pb−Free Packages are Available*
60 VOLTS, 115 WATTS MAXIMUM RATINGS Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 60 Vdc Collector−Emitter Voltage VCER 70 Vdc
TO−204AA (TO−3)
Collector−Base Voltage V
CASE 1−07
CB 100 Vdc
STYLE 1
Emitter−Base Voltage VEB 7 Vdc Collector Current − Continuous IC 15 Adc Base Current IB 7 Adc Total Power Dissipation @ TC = 25°C PD 115 W
MARKING DIAGRAM
Derate Above 25°C 0.657 W/°C Operating and Storage Junction TJ, Tstg −65 to +200 °C Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not xxxx55G normal operating conditions) and are not valid simultaneously. If these limits are AYYWW exceeded, device functional operation is not implied, damage may occur and MEX reliability may be affected. 160 140 xxxx55 = Device Code xxxx = 2N30 or MJ20 ATTS) 120 G = Pb−Free Package (W A = Location Code 100 YY = Year ATION WW = Work Week 80 MEX = Country of Orgin 60
ORDERING INFORMATION
40 , POWER DISSIP DP 20
Device Package Shipping
2N3055 TO−204AA 100 Units / Tray 0 0 25 50 75 100 125 150 175 200 2N3055G TO−204AA 100 Units / Tray T (Pb−Free) C, CASE TEMPERATURE (°C)
Figure 1. Power Derating
MJ2955 TO−204AA 100 Units / Tray MJ2955G TO−204AA 100 Units / Tray (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Preferred
devices are recommended choices for future use Reference Manual, SOLDERRM/D. and best overall value. © Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2005 − Rev. 6 2N3055/D
Preferred Device
Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.
Features http://onsemi.com
• DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −
15 AMPERE
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc •
POWER TRANSISTORS
Excellent Safe Operating Area •
COMPLEMENTARY SILICON
Pb−Free Packages are Available*
60 VOLTS, 115 WATTS MAXIMUM RATINGS Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 60 Vdc Collector−Emitter Voltage VCER 70 Vdc
TO−204AA (TO−3)
Collector−Base Voltage V
CASE 1−07
CB 100 Vdc
STYLE 1
Emitter−Base Voltage VEB 7 Vdc Collector Current − Continuous IC 15 Adc Base Current IB 7 Adc Total Power Dissipation @ TC = 25°C PD 115 W
MARKING DIAGRAM
Derate Above 25°C 0.657 W/°C Operating and Storage Junction TJ, Tstg −65 to +200 °C Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not xxxx55G normal operating conditions) and are not valid simultaneously. If these limits are AYYWW exceeded, device functional operation is not implied, damage may occur and MEX reliability may be affected. 160 140 xxxx55 = Device Code xxxx = 2N30 or MJ20 ATTS) 120 G = Pb−Free Package (W A = Location Code 100 YY = Year ATION WW = Work Week 80 MEX = Country of Orgin 60
ORDERING INFORMATION
40 , POWER DISSIP DP 20
Device Package Shipping
2N3055 TO−204AA 100 Units / Tray 0 0 25 50 75 100 125 150 175 200 2N3055G TO−204AA 100 Units / Tray T (Pb−Free) C, CASE TEMPERATURE (°C)
Figure 1. Power Derating
MJ2955 TO−204AA 100 Units / Tray MJ2955G TO−204AA 100 Units / Tray (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques
Preferred
devices are recommended choices for future use Reference Manual, SOLDERRM/D. and best overall value. © Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
December, 2005 − Rev. 6 2N3055/D