Datasheet MMDT3906 (Diodes) - 2
Hersteller | Diodes |
Beschreibung | 40V Dual PNP Small Signal Transistor in SOT363 |
Seiten / Seite | 7 / 2 — MMDT3906. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. … |
Dateiformat / Größe | PDF / 482 Kb |
Dokumentensprache | Englisch |
MMDT3906. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. ESD Ratings. JEDEC Class
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Textversion des Dokuments
MMDT3906 Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA
Thermal Characteristics Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 200 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings
(Note 6)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMDT3906 2 of 7 April 2016 Document number: DS30124 Rev. 13- 2
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