Datasheet SI9424DY (Fairchild) - 3

S i9 42 Typical Characteristics 4 DY
2.5 50
E
VGS= -4.5V
C N )
-3.5V 40
A A D T
2
IS T ( N
-2.5V
IZE S E E
30
-R MAL URR R ON
1.5
C E
VGS= -2.5V
N
20
, NO C ) R
-3.0V
N RAI
-2.0V -3.5V
S(O , D D
-4.5V
D R -SOU
1
-I
10
IN A R D
-1.5V 0 0.5 0 1 2 3 4 5 0 10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.1 1.6
E )
ID= -4A ID = -8A
M H ANC
VGS= -10V 0.08 1.4
O D T ( E IS E S C IZ N AL -RE A
0.06 1.2
N ST RM O O E ESI , N
1
R
0.04
N) URC
o
(O O DS , ON
TJ= 125 C
S N) R N- (O
0.8 0.02 o 25 C
DS RAI R D
0.6 0 -50 -25 0 25 50 75 100 125 150 1 1.5 2 2.5 3 3.5 4 4.5 5
o -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Temperature. with Gate-to-Source Voltage.
100 20
)
VDS= -5V
A
V o GS= 0 TJ= -55 C o 10
)
25 C
NT (
16
A ( T
o
N
125 C 1 o
URRE
TJ=125 C
E C
12
N
o
RR
25 C 0.1
CU
o
N DRAI
-55 C 8
E S RAI
0.01
R , D E D V -I
4 0.001
, RE S -I
0 0.0001 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
Si9424DY Rev.A