Datasheet OP470 (Analog Devices) - 4

OP470–SPECIFICATIONS WAFER TEST LIMITS (at VS = 15 V, 25 C, unless otherwise noted.) OP470GBC Parameter Symbol Conditions Limit Unit
INPUT OFFSET VOLTAGE VOS 0.8 mV Max INPUT OFFSET CURRENT IOS VCM = 0 V 20 nA Max INPUT BIAS CURRENT IB VCM = 0 V 50 nA Min LARGE-SIGNAL VO = ±10 V Voltage Gain AVO RL = 10 kW 800 V/mV Min RL = 2 kW 400 INPUT VOLTAGE RANGE* IVR ±11 V Min OUTPUT VOLTAGE SWING VO RL ≥ 2 kW ±12 V Min COMMON-MODE REJECTION CMR VCM = ±11 V 100 dB POWER SUPPLY REJECTION RATIO PSRR VS = ± 4.5 V to ± 18 V 5.6 mV/V Max SUPPLY CURRENT (All Amplifiers) ISY No Load 11 mA Max NOTE *Guaranteed by CMR test Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaran- teed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. –4– REV. B Document Outline FEATURES GENERAL DESCRIPTION PIN CONNECTIONS SIMPLIFIED SCHEMATIC SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ORDERING GUIDE Typical Performance Characteristics APPLICATIONS INFORMATION Voltage and Current Noise TOTAL NOISE AND SOURCE RESISTANCE NOISE MEASUREMENTS— PEAK-TO-PEAK VOLTAGE NOISE NOISE MEASUREMENT—NOISE VOLTAGE DENSITY NOISE MEASUREMENT—CURRENT NOISE DENSITY CAPACITIVE LOAD DRIVING AND POWER SUPPLY CONSIDERATIONS UNITY-GAIN BUFFER APPLICATIONS 50k APPLICATIONS Low Noise Amplifier DIGITAL PANNING CONTROL SQUELCH AMPLIFIER FIVE-BAND LOW-NOISE STEREO GRAPHIC EQUALIZER OUTLINE DIMENSIONS Revision History