Datasheet OP285 (Analog Devices) - 2

OP285–SPECIFICATIONS (@ Vs = 15.0 V, TA = 25 C, unless otherwise noted.) Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 35 250 µV VOS –40°C ≤ TA ≤ +85°C 600 µV Input Bias Current IB VCM = 0 V 100 350 nA IB VCM = 0 V, –40°C ≤ TA ≤ +85°C 400 nA Input Offset Current IOS VCM = 0 V 2 ±50 nA IOS VCM = 0 V, –40°C ≤ TA ≤ +85°C 2 ±100 nA Input Voltage Range VCM –10.5 10.5 V Common-Mode Rejection CMRR VCM = ± 10.5 V, –40°C ≤ TA ≤ +85°C 80 106 dB Large-Signal Voltage Gain AVO RL = 2 kΩ 250 V/mV AVO RL = 2 kΩ, –40°C ≤ TA ≤ +85°C 175 V/mV AVO RL = 600 Ω 200 V/mV Common-Mode Input Capacitance 7.5 pF Differential Input Capacitance 3.7 pF Long-Term Offset Voltage ∆VOS Note 1 300 µV Offset Voltage Drift ∆VOS/∆T 1 µV/°C OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 2 kΩ –13.5 +13.9 +13.5 V VO RL = 2 kΩ, –40°C ≤ TA ≤ +85°C –13 +13.9 +13 V RL = 600 Ω, VS = ± 18 V –16/+14 V POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ± 4.5 V to ± 18 V 85 111 dB PSRR VS = ± 4.5 V to ± 18 V, –40°C ≤ TA ≤ +85°C 80 dB Supply Current ISY VS = ±4.5 V to ± 18 V, VO = 0 V, –40°C ≤ T 4 5 mA A ≤ +85°C ISY VS = ±22 V, VO = 0 V, –40°C ≤ TA ≤ +85°C 5.5 mA Supply Voltage Range VS ±4.5 ±22 V DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 15 22 V/µs Gain Bandwidth Product GBP 9 MHz Phase Margin ␪o 62 Degrees Settling Time ts To 0.1%, 10 V Step 625 ns ts To 0.01%, 10 V Step 750 ns Distortion AV = 1, VOUT = 8.5 V p-p, f = 1 kHz, RL = 2 kΩ –104 dB Voltage Noise Density en f = 30 Hz 7 nV/√Hz en f = 1 kHz 6 nV/√Hz Current Noise Density in f = 1 kHz 0.9 pA/√Hz Headroom THD + Noise ≤ 0.01%, RL = 2 kΩ, VS = ± 18 V >12.9 dBu NOTE 1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent wafer lots at 125 °C, with an LTPD of 1.3. Specifications subject to change without notice. –2– REV. C