AD8012MAXIMUM POWER DISSIPATION2.0 The maximum power that can be safely dissipated by the AD8012 TJ = 150C is limited by the associated rise in junction temperature. The maxi- mum safe junction temperature for plastic encapsulated devices 1.58-LEAD SOIC is determined by the glass transition temperature of the plastic, PACKAGE approximately +150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the 1.0 stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure. 8-LEAD0.5MSOP The output stage of the AD8012 is designed for maximum load current capability. As a result, shorting the output to common MAXIMUM POWER DISSIPATION – W can cause the AD8012 to source or sink 500 mA. To ensure 0–50 –40 –30 –20 –10010203040 5060 7080 90 proper operation, it is necessary to observe the maximum power AMBIENT TEMPERATURE –C derating curves. Direct connection of the output to either power supply rail can destroy the device. Figure 3. Plot of Maximum Power Dissipation vs. Temperature for AD8012 Test Circuits750750750750VOUTVINVOUTRLR53.6LVIN+VS+V49.9S++0.1F10F0.1F10F++0.1F10F0.1F10F–VS–VS Test Circuit 1. Gain = +2 Test Circuit 2. Gain = –1 –4– REV. C Document Outline FEATURES APPLICATIONS PRODUCT DESCRIPTION FUNCTIONAL BLOCK DIAGRAM SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY MAXIMUM POWER DISSIPATION Test Circuits ABSOLUTE MAXIMUM RATINGS Typical Performance Characteristics THEORY OF OPERATION DC GAIN CHARACTERISTICS APPLICATIONS Line Driving for HDSL Choosing the Appropriate Turns Ratio for the Transformer LAYOUT CONSIDERATIONS OUTLINE DIMENSIONS Ordering Guide Revision History