Datasheet 2SJ305 (Toshiba) - 3

HerstellerToshiba
BeschreibungField Effect Transistor Silicon P Channel MOS Type
Seiten / Seite5 / 3 — 2SJ305. 3. 2014-03-01. Document. Outline. TOSHIBA. Field. Effect. …
Dateiformat / GrößePDF / 330 Kb
DokumentenspracheEnglisch

2SJ305. 3. 2014-03-01. Document. Outline. TOSHIBA. Field. Effect. Transistor. Silicon. P. Channel. MOS. Type. Absolute. Maximum. Ratings. (Ta. . 25°C)

2SJ305 3 2014-03-01 Document Outline TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Absolute Maximum Ratings (Ta  25°C)

Modelllinie für dieses Datenblatt

Textversion des Dokuments

2SJ305 3 2014-03-01 Document Outline TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Absolute Maximum Ratings (Ta  25°C) Marking Equivalent Circuit Electrical Characteristics (Ta  25°C) Switching Time Test Circuit RESTRICTIONS ON PRODUCT USE