Datasheet ZTX869 (Diodes)

NPN SILICON PLANAR MEDIUM POWER ZTX869 HIGH CURRENT TRANSISTOR ZTX869 ISSUE 1 – APRIL 94 ELECTRICAL CHARACTERISTICS (at T FEATURES amb = 25°C) * 25 Volt VCEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 5 Amps continuous current Base-Emitter VBE(on) 800 900 mV IC=5A, VCE=1V* * Up to 20 Amps peak current Turn-On Voltage * Very low saturation voltage Static Forward hFE 300 450 IC=10mA, VCE=1V * Hig h Gain C Current Transfer 300 450 IC=1A, VCE=1V* * P B E tot=1.2 Watts Ratio 250 400 IC=5A, VCE=1V* 40 100 IC=20A, VCE=1V* E-Line Transition Frequency f TO92 Compatible T 100 MHz IC=100mA, VCE=10V f=50MHz ABSOLUTE MAXIMUM RATINGS. Output Capacitance C PARAMETER SYMBOL VALUE UNIT obo 70 pF VCB=10V, f=1MHz Col ector-Base Voltage VCBO 60 V Switching Times ton 60 ns IC=1A, IB1=100mA toff 680 ns IB2=100mA, VCC=10V Collector-Emitter Voltage VCEO 25 V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Emitter-Base Voltage VEBO 6 V Peak Pulse Current ICM 20 A Continuous Collector Current IC 5 A THERMAL CHARACTERISTICS Practical Power Dissipation* Ptotp 1.58 W PARAMETER SYMBOL MAX. UNIT Power Dissipation at Tamb=25°C Ptot 1.2 W Thermal Resistance: Junction to Ambient Rth(j-amb) 150 °C/W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C Junction to Case Rth(j-case) 50 °C/W *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Col ector-Base Breakdown V(BR)CBO 60 120 V IC=100µA Voltage ) 4.0 s 150 D.C. tt ) Col ector-Emitter Breakdown V(BR)CER 60 120 V IC=1µA, RB ≤1KΩ a /W t1 D=t1/tP Voltag (W °C - 3.0 Case te Col ector-Emitter Breakdown V ce ( (BR)CEO 25 35 V IC=10mA* on 100 ti n tP Voltage pa ta i m s 2.0 peratu D=0.6 ss si i e Emitter-Base Breakdown V(BR)EBO 6 8 V IE=100µA D re Voltage A 50 mbient t 1.0 em D=0.2 ower perat Collector Cut-Off Current I ure ermal R CBO 50 nA VCB=50V P h D=0.1 x D=0.05 1 µ T A VCB=50V, Tamb=100°C a Single Pulse M 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current ICER 50 nA VCB=50V T -Temperature (°C) R ≤1KΩ 1 µA V Pulse Width (seconds) CB=50V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V
Derating curve Maximum transient thermal impedance
Collector-Emitter Saturation VCE(sat) 25 50 mV IC=0.5A, IB=10mA* Voltage 50 80 mV IC=1A, IB=10mA* 100 200 mV IC=2A, IB=100mA* 180 220 mV IC=5A, IB=100mA* Base-Emitter VBE(sat) 880 950 mV IC=5A, IB=100mA* Saturation Voltage 3-307 3-306