Datasheet SP1250 (Littelfuse) - 2
| Hersteller | Littelfuse |
| Beschreibung | 50A Discrete Unidirectional TVS Diode |
| Seiten / Seite | 5 / 2 — TVS Diode Arrays. Absolute Maximum Ratings. Electrical Characteristics (T … |
| Dateiformat / Größe | PDF / 1.0 Mb |
| Dokumentensprache | Englisch |
TVS Diode Arrays. Absolute Maximum Ratings. Electrical Characteristics (T =25. Capacitance vs. Reverse Bias
Modelllinie für dieses Datenblatt
Textversion des Dokuments
TVS Diode Arrays
(SPA ® Diodes) General Purpose Surge Protection - SP1250
Absolute Maximum Ratings
Symbol Parameter Value Units I Peak Current (t =8/20μs) 50 A PP p T Operating Temperature -40 to 125 °C OP T Storage Temperature -55 to 150 °C STOR CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Characteristics (T =25
º
C) OP
Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1μA 5 V RWM R Breakdown Voltage V I =1mA 5.1 5.5 V BR R Reverse Leakage Current I V =5V 0.02 0.1 μA LEAK R Clamp Voltage1 V I =50A, t =8/20μs 8.7 10 V C PP p Dynamic Resistance2 R TLP, t =100ns 0.05 Ω DYN P IEC 61000-4-2 (Contact Discharge) ±30 kV ESD Withstand Voltage1 VESD IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 C Reverse Bias=0V, f=1MHz 120 pF IO-GND Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 0.2ns rise time, and average window t1=70ns to t2= 90ns
Capacitance vs. Reverse Bias Clamping voltage vs. I for 8/20μs waveshape PP 120.0 10.0 9.0 100.0 8.0 (pF) ) C e 7.0 80.0 (V nc e 6.0 ta 60.0 ltag 5.0 paci Vo 4.0 p Ca 40.0 3.0 am Cl 2.0 20.0 1.0 0.0 0.0 15 20 25 30 35 40 45 50 0 1 2 3 4 5 Peak Pulse Current - IPP (A) Bias Voltage (V)
©2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 08/05/20
(SPA ® Diodes) General Purpose Surge Protection - SP1250
Absolute Maximum Ratings
Symbol Parameter Value Units I Peak Current (t =8/20μs) 50 A PP p T Operating Temperature -40 to 125 °C OP T Storage Temperature -55 to 150 °C STOR CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Characteristics (T =25
º
C) OP
Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1μA 5 V RWM R Breakdown Voltage V I =1mA 5.1 5.5 V BR R Reverse Leakage Current I V =5V 0.02 0.1 μA LEAK R Clamp Voltage1 V I =50A, t =8/20μs 8.7 10 V C PP p Dynamic Resistance2 R TLP, t =100ns 0.05 Ω DYN P IEC 61000-4-2 (Contact Discharge) ±30 kV ESD Withstand Voltage1 VESD IEC 61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 C Reverse Bias=0V, f=1MHz 120 pF IO-GND Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 0.2ns rise time, and average window t1=70ns to t2= 90ns
Capacitance vs. Reverse Bias Clamping voltage vs. I for 8/20μs waveshape PP 120.0 10.0 9.0 100.0 8.0 (pF) ) C e 7.0 80.0 (V nc e 6.0 ta 60.0 ltag 5.0 paci Vo 4.0 p Ca 40.0 3.0 am Cl 2.0 20.0 1.0 0.0 0.0 15 20 25 30 35 40 45 50 0 1 2 3 4 5 Peak Pulse Current - IPP (A) Bias Voltage (V)
©2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 08/05/20