Datasheet PS508, PS509 (Diodes) - 8
| Hersteller | Diodes |
| Beschreibung | Precision 8-Channels, Differential 4-Channels, 36V Analog Multiplexers |
| Seiten / Seite | 15 / 8 — PS508/PS509. Electrical Characteristics: Single Supply Cont. Symbol. … |
| Dateiformat / Größe | PDF / 2.4 Mb |
| Dokumentensprache | Englisch |
PS508/PS509. Electrical Characteristics: Single Supply Cont. Symbol. Parameters. Conditions. Min. Typ. Max. Units. Note:
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PS508/PS509 Electrical Characteristics: Single Supply Cont. Symbol Parameters Conditions Min. Typ. Max. Units
V = 8V, R = 300Ω, C = 35pF 212 418 ns S L L V = 8V, R = 300Ω, S L t Transition time C = 35pF T = –40°C to +85°C 418 ns A t L V = 8V, R = 300Ω, S L C = 35pF T = –40°C to +125°C 418 ns A L t Break-before-make V = 8V, R = 300Ω, C = 35pF, T = –40°C to S L L A BBM time delay +125°C 30 120 ns V = 6 V 0.5 pC Q Charge injection C = 1nF, R = 0Ω S J L S V = 0 V to 12 V, ±1.5 pC S Nonadjacent channel R = 50Ω, V = 1V , to D, DA, DB -96 dB Off-isolation L S RMS f = 1MHz Adjacent channel to D, DA, DB -85 dB Channel-to-channel R = 50Ω, V = 1V , Nonadjacent channels -96 dB L S RMS crosstalk f = 1MHz Adjacent channels -88 dB C Input off-capacitance f = 1MHz, V = 6V 5 7 pF S(OFF) S PS508 24 30 pF C Output off-capaci- = 6V D(OFF) tance f = 1MHz, VS PS509 15 20 pF PS508 30 36 pF C Input/Output on- = 6V D(ON) capacitance f = 1MHz, VS PS509 21 25 pF Power Supply 104 160 μA VDD supply current All V = 0V or 3.3V, A V = 0V, V = 3.3V T = –40°C to +85°C 160 μA A S EN T = –40°C to +125°C 160 μA A 104 160 μA VSS supply current All V = 0V or 3.3V, A V = 0V, V = 3.3V T = –40°C to +85°C 160 μA A S EN T = –40°C to +125°C 160 μA A
Note:
1. When VS is 1 V, VD is 10 V, and vice versa. 2. Specified by design, not production tested. PS508/PS509 Document Number DS41784 Rev 2-2 8 www.diodes.com June 2020 Diodes Incorporated
PS508/PS509 Electrical Characteristics: Single Supply Cont. Symbol Parameters Conditions Min. Typ. Max. Units
V = 8V, R = 300Ω, C = 35pF 212 418 ns S L L V = 8V, R = 300Ω, S L t Transition time C = 35pF T = –40°C to +85°C 418 ns A t L V = 8V, R = 300Ω, S L C = 35pF T = –40°C to +125°C 418 ns A L t Break-before-make V = 8V, R = 300Ω, C = 35pF, T = –40°C to S L L A BBM time delay +125°C 30 120 ns V = 6 V 0.5 pC Q Charge injection C = 1nF, R = 0Ω S J L S V = 0 V to 12 V, ±1.5 pC S Nonadjacent channel R = 50Ω, V = 1V , to D, DA, DB -96 dB Off-isolation L S RMS f = 1MHz Adjacent channel to D, DA, DB -85 dB Channel-to-channel R = 50Ω, V = 1V , Nonadjacent channels -96 dB L S RMS crosstalk f = 1MHz Adjacent channels -88 dB C Input off-capacitance f = 1MHz, V = 6V 5 7 pF S(OFF) S PS508 24 30 pF C Output off-capaci- = 6V D(OFF) tance f = 1MHz, VS PS509 15 20 pF PS508 30 36 pF C Input/Output on- = 6V D(ON) capacitance f = 1MHz, VS PS509 21 25 pF Power Supply 104 160 μA VDD supply current All V = 0V or 3.3V, A V = 0V, V = 3.3V T = –40°C to +85°C 160 μA A S EN T = –40°C to +125°C 160 μA A 104 160 μA VSS supply current All V = 0V or 3.3V, A V = 0V, V = 3.3V T = –40°C to +85°C 160 μA A S EN T = –40°C to +125°C 160 μA A
Note:
1. When VS is 1 V, VD is 10 V, and vice versa. 2. Specified by design, not production tested. PS508/PS509 Document Number DS41784 Rev 2-2 8 www.diodes.com June 2020 Diodes Incorporated