Datasheet SiSS94DN (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | N-Channel 200 V (D-S) MOSFET |
| Seiten / Seite | 7 / 3 — SiSS94DN. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Dateiformat / Größe | PDF / 195 Kb |
| Dokumentensprache | Englisch |
SiSS94DN. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics
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SiSS94DN
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 40 10000 40 10000 V = 10 V thru 5 V GS 30 ) 30 ) 1000 1000 rrent (A ne ne rrent (A T = 125 °C ine u C ne ne ine u 20 20 C C n V = 5 V n GS 1st li 2nd li 2nd l 1st li 2nd li 2nd l rai rai D 100 D - 100 - I D 10 I D 10 T = 25 °C C V = 4 V GS T = -55 °C C 0 10 0 10 0 1.0 2.0 3.0 4.0 5.0 0 2 4 6 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS
Output Characteristics Transfer Characteristics
Axis Title Axis Title 0.150 10000 10 000 10000 ) Ω 0.120 C 1000 iss 1000 1000 (pF) 0.090 ine V = 4.5 V GS ne ne ne ne Resistance ( ine tance 100 Coss 2nd l n- V = 10 V O GS 1st li 2nd li 1st li 2nd li - 0.060 2nd l apaci ) n 100 C 100 C DS(o C - rss R 10 0.030 0 10 1 10 0 15 30 45 60 0 50 100 150 200 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS
On-Resistance vs. Drain Current and Gate Voltage Capacitance
Axis Title Axis Title 10 10000 2.4 10000 I = 5.4 A V = 10 V, 5.4 A GS D ed) liz 8 2.0 a orm 1000 (N 1000 6 1.6 tance s 2nd line 1st line 2nd line 2nd lineine 1st line 2nd line 4 esi 1.2 V = 50 V, 100 V, 160 V V = 7.5 V, 5.3 A DS 100 GS 100 2nd l - On-R - Gate-to-Source Voltage (V) 2 0.8 (on) GS S V DR 0 10 0.4 10 0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) g TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
S19-0849-Rev. A, 07-Oct-2019
3
Document Number: 77350 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 40 10000 40 10000 V = 10 V thru 5 V GS 30 ) 30 ) 1000 1000 rrent (A ne ne rrent (A T = 125 °C ine u C ne ne ine u 20 20 C C n V = 5 V n GS 1st li 2nd li 2nd l 1st li 2nd li 2nd l rai rai D 100 D - 100 - I D 10 I D 10 T = 25 °C C V = 4 V GS T = -55 °C C 0 10 0 10 0 1.0 2.0 3.0 4.0 5.0 0 2 4 6 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS
Output Characteristics Transfer Characteristics
Axis Title Axis Title 0.150 10000 10 000 10000 ) Ω 0.120 C 1000 iss 1000 1000 (pF) 0.090 ine V = 4.5 V GS ne ne ne ne Resistance ( ine tance 100 Coss 2nd l n- V = 10 V O GS 1st li 2nd li 1st li 2nd li - 0.060 2nd l apaci ) n 100 C 100 C DS(o C - rss R 10 0.030 0 10 1 10 0 15 30 45 60 0 50 100 150 200 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS
On-Resistance vs. Drain Current and Gate Voltage Capacitance
Axis Title Axis Title 10 10000 2.4 10000 I = 5.4 A V = 10 V, 5.4 A GS D ed) liz 8 2.0 a orm 1000 (N 1000 6 1.6 tance s 2nd line 1st line 2nd line 2nd lineine 1st line 2nd line 4 esi 1.2 V = 50 V, 100 V, 160 V V = 7.5 V, 5.3 A DS 100 GS 100 2nd l - On-R - Gate-to-Source Voltage (V) 2 0.8 (on) GS S V DR 0 10 0.4 10 0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) g TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
S19-0849-Rev. A, 07-Oct-2019
3
Document Number: 77350 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000