Datasheet K6R1016V1D (Samsung) - 2
| Hersteller | Samsung |
| Beschreibung | CMOS SRAM |
| Seiten / Seite | 11 / 2 — for AT&T. K6R1016V1D. CMOS SRAM. 1Mb Async. Fast SRAM Ordering … |
| Dateiformat / Größe | PDF / 269 Kb |
| Dokumentensprache | Englisch |
for AT&T. K6R1016V1D. CMOS SRAM. 1Mb Async. Fast SRAM Ordering Information. Org. Part Number. VDD(V). Speed ( ns ). PKG
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for AT&T K6R1016V1D CMOS SRAM 1Mb Async. Fast SRAM Ordering Information Org. Part Number VDD(V) Speed ( ns ) PKG Temp. & Power
K6R1004C1D-JC(I) 10/12 5 10/12 256K x4 J : 32-SOJ K6R1004V1D-JC(I) 08/10 3.3 8/10 C : Commercial Temperature ,Normal Power Range K6R1008C1D-J(T)C(I) 10/12 5 10/12 J : 32-SOJ 128K x8 I : Industrial Temperature T : 32-TSOP2 K6R1008V1D-J(T)C(I) 08/10 3.3 8/10 ,Normal Power Range K6R1016C1D-J(T,E)C(I) 10/12 5 10/12 J : 44-SOJ 64K x16 T : 44-TSOP2 K6R1016V1D-J(T,E)C(I) 08/10 3.3 8/10 E : 48-TBGA
Revision 3.0
- 2 -
June 2002
K6R1004C1D-JC(I) 10/12 5 10/12 256K x4 J : 32-SOJ K6R1004V1D-JC(I) 08/10 3.3 8/10 C : Commercial Temperature ,Normal Power Range K6R1008C1D-J(T)C(I) 10/12 5 10/12 J : 32-SOJ 128K x8 I : Industrial Temperature T : 32-TSOP2 K6R1008V1D-J(T)C(I) 08/10 3.3 8/10 ,Normal Power Range K6R1016C1D-J(T,E)C(I) 10/12 5 10/12 J : 44-SOJ 64K x16 T : 44-TSOP2 K6R1016V1D-J(T,E)C(I) 08/10 3.3 8/10 E : 48-TBGA
Revision 3.0
- 2 -
June 2002