Datasheet AOZ5317UQI (Alpha & Omega) - 7
| Hersteller | Alpha & Omega |
| Beschreibung | High-Current, High-Performance DrMOS Power Module |
| Seiten / Seite | 17 / 7 — AOZ5317UQI. Electrical Characteristics(4). Symbol. Parameter. Conditions. … |
| Dateiformat / Größe | PDF / 2.4 Mb |
| Dokumentensprache | Englisch |
AOZ5317UQI. Electrical Characteristics(4). Symbol. Parameter. Conditions. Min. Typ. Max. Units. GATE DRIVER TIMING. THERMAL NOTIFICATION
Modelllinie für dieses Datenblatt
Textversion des Dokuments
AOZ5317UQI Electrical Characteristics(4)
TJ = 0°C to 150°C. Typical values reflect 25°C ambient temperature; VIN = 12V, VOUT = 1V, PVCC = VCC = DISB# = 5V, unless otherwise specified. Min/Max values are guaranteed by test, design, or statistical correlation.
Symbol Parameter Conditions Min. Typ. Max. Units GATE DRIVER TIMING
tPDLU PWM to High-Side Gate PWM: H L, VSWH: H L 24 ns tPDLL PWM to Low-Side Gate PWM: L H, GL: H L 25 ns tPDHU LS to HS Gate Deadtime GL: H L, VSWH: L H 15 ns tPDHL HS to LS Gate Deadtime VSWH: H 1V, GL: L H 13 ns PWM: L V t TRI, GL: H L and TSSHD Tri-State Shutdown Delay 25 ns PWM: H VTRI, VSWH: H L PWM: V t TRI H, VSWH: L H TSEXIT Tri-State Propagation Delay 35 ns PWM: VTRI L, GL: L H tLGMIN LS Minimum On Time SMOD# = L 350 ns
THERMAL NOTIFICATION
TJTHWN Junction Thermal Threshold Temperature Rising 150 °C TJHYST Junction Thermal Hysteresis 30 °C VTHWN THWN Pin Output Low ITHWN = 0.5mA 60 mV RTHWN THWN Pull-Down Resistance 120 Ω
Notes:
4. All voltages are specified with respect to the corresponding AGND pin. 5. Characterization value. Not tested in production. Rev. 2.0 June 2020
www.aosmd.com
Page 7 of 17
TJ = 0°C to 150°C. Typical values reflect 25°C ambient temperature; VIN = 12V, VOUT = 1V, PVCC = VCC = DISB# = 5V, unless otherwise specified. Min/Max values are guaranteed by test, design, or statistical correlation.
Symbol Parameter Conditions Min. Typ. Max. Units GATE DRIVER TIMING
tPDLU PWM to High-Side Gate PWM: H L, VSWH: H L 24 ns tPDLL PWM to Low-Side Gate PWM: L H, GL: H L 25 ns tPDHU LS to HS Gate Deadtime GL: H L, VSWH: L H 15 ns tPDHL HS to LS Gate Deadtime VSWH: H 1V, GL: L H 13 ns PWM: L V t TRI, GL: H L and TSSHD Tri-State Shutdown Delay 25 ns PWM: H VTRI, VSWH: H L PWM: V t TRI H, VSWH: L H TSEXIT Tri-State Propagation Delay 35 ns PWM: VTRI L, GL: L H tLGMIN LS Minimum On Time SMOD# = L 350 ns
THERMAL NOTIFICATION
TJTHWN Junction Thermal Threshold Temperature Rising 150 °C TJHYST Junction Thermal Hysteresis 30 °C VTHWN THWN Pin Output Low ITHWN = 0.5mA 60 mV RTHWN THWN Pull-Down Resistance 120 Ω
Notes:
4. All voltages are specified with respect to the corresponding AGND pin. 5. Characterization value. Not tested in production. Rev. 2.0 June 2020
www.aosmd.com
Page 7 of 17