Datasheet EPC2215 (Efficient Power Conversion) - 4

eGaN® FET DATASHEET
EPC2215
Figure 10: Normalized Threshold Voltage vs. Temperature Figure 11: Safe Operating Area
1.4 1000 1.3 ID = 6 mA 1.2 100 1.1 1. 10 Limited by RDS(on) 0.9
I – Drain Current (A) D
Pulse Width
Normalized Threshold Voltage
0.8 1 1 ms 100 µs 0.7 10 µs 0.6 0.1 0 25 50 75 100 125 150 0.1 1 10 100 1000
TJ – Junction Temperature (°C) VDS – Drain-Source Voltage (V) TJ = Max Rated, TC = +25°C, Single Pulse Figure 12: Transient Thermal Response Curves Junction-to-Board
1
Duty Cycle: 0.5 0.2 0.1
0.1
0.05 PDM Thermal Impedance 0.02 ed t1 0.01
0.01
t2 ormaliz , N Single Pulse Notes: ZθJB Duty Factor: D = t1/t2 Peak TJ = PDM x ZθJB x RθJB + TB
0.00110-5 10-4 10-3 10-2 10-1 1 10+1
tp, Rectangular Pulse Duration, seconds Junction-to-Case
1
Duty Cycle: 0.5 0.2
0.1
0.1 0.05 0.02 0.01 PDM Thermal Impedance
0.01
ed t1 Single Pulse t2 ormaliz
0.001
, N Notes: ZθJC Duty Factor: D = t1/t2 Peak TJ = PDM x ZθJC x RθJC + TC
0.000110-6 10-5 10-4 10-3 10-2 10-1 1
tp, Rectangular Pulse Duration, seconds
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