Datasheet XPN6R706NC (Toshiba) - 2

XPN6R706NC 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 40 A Drain current (pulsed) (Note 1) IDP 80 Power dissipation (Tc = 25 ) PD 100 W Power dissipation (t = 10 s) (Note 2) 2.27 Power dissipation (t = 10 s) (Note 3) 0.84 Single-pulse avalanche energy (Note 4) EAS 122 mJ Single-pulse avalanche current IAS 40 A Channel temperature (Note 5) Tch 175 Storage temperature (Note 5) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal impedance (Tc = 25 ) zth(ch-c) 1.5 /W Channel-to-ambient thermal impedance (t = 10 s) (Note 2) zth(ch-a) 66 Channel-to-ambient thermal impedance (t = 10 s) (Note 3) zth(ch-a) 178 Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = 48 V, Tch = 25 (initial), L = 58.7 µH, RG = 25Ω, IAS = 40 A Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Fig. 5.1 Device Mounted on a Glass-Epoxy Fig. 5.2 Device Mounted on a Glass-Epoxy Board (a) Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. ©2019-2020 2 2020-06-24 Toshiba Electronic Devices & Storage Corporation Rev.3.0