Datasheet SiRA99DP (Vishay)
| Hersteller | Vishay |
| Beschreibung | P-Channel 30 V (D-S) MOSFET |
| Seiten / Seite | 9 / 1 — SiRA99DP. P-Channel 30 V (D-S) MOSFET. FEATURES. PowerPAK® SO-8 Single. … |
| Dateiformat / Größe | PDF / 251 Kb |
| Dokumentensprache | Englisch |
SiRA99DP. P-Channel 30 V (D-S) MOSFET. FEATURES. PowerPAK® SO-8 Single. APPLICATIONS. PRODUCT SUMMARY. ORDERING INFORMATION
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Textversion des Dokuments
SiRA99DP
www.vishay.com Vishay Siliconix
P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® SO-8 Single
D • TrenchFET® Gen IV p-channel power MOSFET D 8 D 7 • Very low RDS(on) minimizes voltage drop and D 6 reduces conduction loss 5 • Eliminates the need for charge pump • 100 % Rg and UIS tested • Material categorization: for definitions of compliance 6.15 mm 1 2 S please see www.vishay.com/doc?99912 3 S 1 5.15 mm 4 S
APPLICATIONS
G S Top View Bottom View • Adapter and charger switch
PRODUCT SUMMARY
• Battery and circuit protection G VDS (V) -30 • OR-ing RDS(on) max. () at VGS = -10 V 0.00170 • Load switch RDS(on) max. () at VGS = -4.5 V 0.00265 • Motor drive control Q P-Channel MOSFET g typ. (nC) 84 I D D (A) -195 Configuration Single
ORDERING INFORMATION
Package PowerPAK SO-8 Lead (Pb)-free and halogen-free SiRA99DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -30 V Gate-source voltage VGS +16 / -20 TC = 25 °C -195 T Continuous drain current (T C = 70 °C -156 J = 150 °C) ID TA = 25 °C -47.9 b, c TA = 70 °C -38.3 b, c A Pulsed drain current (t = 100 μs) IDM -400 T -94.5 Continuous source-drain diode current C = 25 °C IS TA = 25 °C -5.6 b, c Single pulse avalanche current I L = 0.1 mH AS -50 Single pulse avalanche energy EAS 125 mJ TC = 25 °C 104 T Maximum power dissipation C = 70 °C 66.6 PD W TA = 25 °C 6.35 b, c TA = 70 °C 4 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) c 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b t 10 s RthJA 15 20 °C/W Maximum junction-to-case (drain) Steady state RthJC 0.9 1.2
Notes
a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 °C/W g. TC = 25 °C S19-0115-Rev. A, 04-Feb-2019
1
Document Number: 71023 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® SO-8 Single
D • TrenchFET® Gen IV p-channel power MOSFET D 8 D 7 • Very low RDS(on) minimizes voltage drop and D 6 reduces conduction loss 5 • Eliminates the need for charge pump • 100 % Rg and UIS tested • Material categorization: for definitions of compliance 6.15 mm 1 2 S please see www.vishay.com/doc?99912 3 S 1 5.15 mm 4 S
APPLICATIONS
G S Top View Bottom View • Adapter and charger switch
PRODUCT SUMMARY
• Battery and circuit protection G VDS (V) -30 • OR-ing RDS(on) max. () at VGS = -10 V 0.00170 • Load switch RDS(on) max. () at VGS = -4.5 V 0.00265 • Motor drive control Q P-Channel MOSFET g typ. (nC) 84 I D D (A) -195 Configuration Single
ORDERING INFORMATION
Package PowerPAK SO-8 Lead (Pb)-free and halogen-free SiRA99DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -30 V Gate-source voltage VGS +16 / -20 TC = 25 °C -195 T Continuous drain current (T C = 70 °C -156 J = 150 °C) ID TA = 25 °C -47.9 b, c TA = 70 °C -38.3 b, c A Pulsed drain current (t = 100 μs) IDM -400 T -94.5 Continuous source-drain diode current C = 25 °C IS TA = 25 °C -5.6 b, c Single pulse avalanche current I L = 0.1 mH AS -50 Single pulse avalanche energy EAS 125 mJ TC = 25 °C 104 T Maximum power dissipation C = 70 °C 66.6 PD W TA = 25 °C 6.35 b, c TA = 70 °C 4 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) c 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b t 10 s RthJA 15 20 °C/W Maximum junction-to-case (drain) Steady state RthJC 0.9 1.2
Notes
a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 °C/W g. TC = 25 °C S19-0115-Rev. A, 04-Feb-2019
1
Document Number: 71023 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000