Datasheet RH1086M (Analog Devices) - 2

RH1086M
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) TA = 25°C SUB- –55°C ≤ TA ≤ 125°C SUB- PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS
Reference Voltage IOUT = 10mA, (VIN – VOUT) = 3V (K) 1.238 1.262 1 V 10mA ≤ IOUT ≤ IFULL LOAD, 6 1.225 1.270 1.225 1.270 2,3 V 1.5V ≤ (VIN – VOUT) ≤ 25V Line Regulation ILOAD = 10mA, 1.5V ≤ (VIN – VOUT) ≤ 15V 2, 3 0.2 1 0.2 2,3 % Load Regulation (VIN – VOUT) = 3V, 2, 3, 6 0.3 1 0.4 2,3 % 10mA ≤ IOUT ≤ IFULL LOAD Dropout Voltage ∆VREF = 1%, IOUT = 1.5A (K) 4 1.5 1 1.5 2,3 V ∆VREF = 1%, IOUT = 0.5A (H) 4 1.25 1 1.25 2,3 V Current Limit (VIN – VOUT) = 5V (K) 1.5 1 1.5 2,3 A (VIN – VOUT) = 5V (H) 0.5 1 0.5 2,3 A (VIN – VOUT) = 25V (K) 0.05 1 0.05 2,3 A (VIN – VOUT) = 25V (H) 0.020 1 0.020 2,3 A Minimum Load Current (VIN – VOUT) = 25V 10 1 10 2,3 mA Thermal Regulation TA = 25°C, 30ms Pulse 0.04 4 %/W Ripple Rejection f = 120Hz, CADJ = 25µF, 6 60 4 60 5,6 dB COUT = 25µF Tantalum, IOUT = IFULL LOAD, (VIN – VOUT) = 3V Adjust Pin Current TJ = 25°C 55 120 1 120 2,3 µA Adjust Pin Current 10mA ≤ IOUT ≤ IFULL LOAD, 6 5 1 5 2,3 µA Change 1.5V ≤ (VIN – VOUT) ≤ 15V Temperature Stability 0.5 0.5 % Long Term Stability TA = 125°C, 1000 Hours 5 0.3 % RMS Output Noise 10Hz ≤ f ≤ 10kHz 0.003 % (% of VOUT) Thermal Resistance Control Circuitry (K) 5 1.7 °C/W Junction-to-Case Control Circuitry (H) 5 15.0 °C/W Power Transistor (K) 5 4.0 °C/W Power Transistor (H) 5 20.0 °C/W Rev. D 2 For more information www.analog.com Document Outline Description Burn-In Circuit Package Information Absolute Maximum Ratings Preconditioning Table 1: Electrical Characteristics Table 1a: Electrical Characteristics Table 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics Revision History