Datasheet RH1011 (Analog Devices) - 3

RH1011
TABLE 1A: ELECTRICAL CHARACTERISTICS 10KRAD (Si) 20KRAD (Si) 50KRAD (Si) 100KRAD (Si) 200KRAD (Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
Positive Supply Current 11 4.0 4.0 4.0 4.0 4.0 mA Negative Supply Current 11 2.5 2.5 2.5 2.5 2.5 mA Strobe Current Minimum to Ensure Output 7,9,11 500 500 500 500 500 µA Transistor is Turned Off Input Capacitance 6 (Typ) 6 (Typ) 6 (Typ) 6 (Typ) 6 (Typ) pF
Note 1:
Inputs may be clamped to supplies with diodes so that maximum
Note 7:
Do not short the STROBE pin to ground. It should be current input voltage actually exceeds supply voltage by one diode drop. See Input driven at 3mA to 5mA for the shortest strobe time. Currents as low as Protection discussion in the LT®1011 data sheet. 500µA will strobe the RH1011 if speed is not important. External leakage
Note 2:
T on the STROBE pin in excess of 0.2µA when the strobe is “off” can cause JMAX = 150°C.
Note 3:
Output is sinking 1.5mA with V offset voltage shifts. OUT = 0V.
Note 4:
These specifications apply for all supply voltages from a single 5V
Note 8:
See graph, Input Offset Voltage vs Common Mode Voltage on the to ±15V, the entire input voltage range and for both high and low output LT1011 data sheet. states. The high state is I
Note 9:
Guaranteed by design, characterization or correlation to other SINK = 100µA, VOUT = (V+ – 1V) and the low state is I tested parameters. SINK = 8mA, VOUT = 0.8V. Therefore, this specication defines a worst-case error band that includes effects due to common mode signals,
Note 10:
VS = ±15V, VCM = 0V, RS = 0Ω, TA = 25°C, VGND = V–, output at voltage gain and output load. Pin 7, unless otherwise noted.
Note 5:
Drift is calculated by dividing the offset difference measured at
Note 11:
VGND = 0V. minimum and maximum temperatures by the temperature difference.
Note 6:
Response time is measured with a 100mV step and 5mV overdrive. The output load is a 500Ω resistor tied to 5V. Time measurement is taken when the output crosses 1.4V.
TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUP PDA Test Notes
Final Electrical Test Requirements (Method 5004) 1*,2,3,4 The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method Group A Test Requirements (Method 5005) 1,2,3,4 5004 of MIL-STD-883 Class B. The verified failures (including Delta Group B and D End Point Electrical Parameters 1,2,3 parameters) of group A, subgroup 1, after burn-in divided by the total (Method 5005) number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. * PDA applies to subgroup 1. See PDA Test Notes. Analog Devices, Inc. reserves the right to test to tighter limits than those given.
TOTAL DOSE BIAS CIRCUIT
12V 5.1k 12Ω 5.1k 8 2 + 7 3 – 1 4 12Ω –12V RH1011 TDBC Rev. E Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications For more information www.a subject to change without notice. No license is granted by implication or other nalog.com wise under any patent or patent rights of Analog Devices. 3 Document Outline Description Burn-In Circuit Package Information Absolute Maximum Ratings Table 1: Electrical characteristics Table 1a: Electrical characteristics Table 2: Electrical Test Requirements Total Dose Bias Circuit Typical Performance Characteristics Revision History