Datasheet ADCMP670 (Analog Devices) - 3
| Hersteller | Analog Devices |
| Beschreibung | Dual Low Power 1.5% Comparator With 400 mV Reference |
| Seiten / Seite | 16 / 3 — ADCMP670. SPECIFICATIONS. Table 1. Parameter Min. Typ. Max. Unit. Test. … |
| Revision | A |
| Dateiformat / Größe | PDF / 337 Kb |
| Dokumentensprache | Englisch |
ADCMP670. SPECIFICATIONS. Table 1. Parameter Min. Typ. Max. Unit. Test. Conditions/Comments
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ADCMP670 SPECIFICATIONS
VDD = 1.7 V to 5.5 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Min Typ Max Unit Test Conditions/Comments
THRESHOLDS1 Rising Input Threshold Voltage 394 400 406 mV VDD = 1.7 V 395 400 405 mV VDD = 5.5 V Falling Input Threshold Voltage 386 391.1 401 mV VDD = 1.7 V 387 391.1 400 mV VDD = 5.5 V Hysteresis = VTH(R) – VTH(F) 7 8.9 11 mV INPUT CHARACTERISTICS Input Bias Current 0.01 10 nA VDD = 1.7 V, VIN = VDD 4 10 nA VDD = 1.7 V, VIN = 0.1 V OPEN-DRAN OUTPUTS Output Low Voltage2 140 200 mV VDD = 1.7 V, IOUT = 3 mA 130 200 mV VDD = 5.5 V, IOUT = 5 mA Output Leakage Current3 0.01 0.8 μA VDD =1.7 V, VOUT = VDD 0.01 0.8 μA VDD =1.7 V, VOUT = 5.5 V DYNAMIC PERFORMANCE2, 4 High-to-Low Propagation Delay 10 μs VDD = 5.5 V, VOL = 400 mV Low-to-High Propagation Delay 8 μs VDD = 5.5 V, VOH = 0.9 × VDD Output Rise Time 0.5 μs VDD = 5.5 V, VO = (0.1 to 0.9) × VDD Output Fall Time 0.07 μs VDD = 5.5 V, VO = (0.1 to 0.9) × VDD POWER SUPPLY Supply Current5 5.7 10 μA VDD = 1.7 V 6.5 11 μA VDD = 5.5 V 1 RL = 100 kΩ, VO = 2 V swing. 2 10 mV input overdrive. 3 VIN = 40 mV overdrive. 4 RL = 10 kΩ. 5 No load current. Rev. A | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS APPLICATION INFORMATION COMPARATORS AND INTERNAL REFERENCE POWER SUPPLY INPUTS OUTPUTS ADDING HYSTERESIS OUTLINE DIMENSIONS ORDERING GUIDE
ADCMP670 SPECIFICATIONS
VDD = 1.7 V to 5.5 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Min Typ Max Unit Test Conditions/Comments
THRESHOLDS1 Rising Input Threshold Voltage 394 400 406 mV VDD = 1.7 V 395 400 405 mV VDD = 5.5 V Falling Input Threshold Voltage 386 391.1 401 mV VDD = 1.7 V 387 391.1 400 mV VDD = 5.5 V Hysteresis = VTH(R) – VTH(F) 7 8.9 11 mV INPUT CHARACTERISTICS Input Bias Current 0.01 10 nA VDD = 1.7 V, VIN = VDD 4 10 nA VDD = 1.7 V, VIN = 0.1 V OPEN-DRAN OUTPUTS Output Low Voltage2 140 200 mV VDD = 1.7 V, IOUT = 3 mA 130 200 mV VDD = 5.5 V, IOUT = 5 mA Output Leakage Current3 0.01 0.8 μA VDD =1.7 V, VOUT = VDD 0.01 0.8 μA VDD =1.7 V, VOUT = 5.5 V DYNAMIC PERFORMANCE2, 4 High-to-Low Propagation Delay 10 μs VDD = 5.5 V, VOL = 400 mV Low-to-High Propagation Delay 8 μs VDD = 5.5 V, VOH = 0.9 × VDD Output Rise Time 0.5 μs VDD = 5.5 V, VO = (0.1 to 0.9) × VDD Output Fall Time 0.07 μs VDD = 5.5 V, VO = (0.1 to 0.9) × VDD POWER SUPPLY Supply Current5 5.7 10 μA VDD = 1.7 V 6.5 11 μA VDD = 5.5 V 1 RL = 100 kΩ, VO = 2 V swing. 2 10 mV input overdrive. 3 VIN = 40 mV overdrive. 4 RL = 10 kΩ. 5 No load current. Rev. A | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS APPLICATION INFORMATION COMPARATORS AND INTERNAL REFERENCE POWER SUPPLY INPUTS OUTPUTS ADDING HYSTERESIS OUTLINE DIMENSIONS ORDERING GUIDE