Datasheet FS8205 (Fortune Semiconductor) - 6
| Hersteller | Fortune Semiconductor |
| Beschreibung | Dual N-Channel Enhancement Mode Power MOSFET |
| Seiten / Seite | 6 / 6 — FS8205 FO RT. r R ro U. ef pe NE. er rti. en es. y 10. Package … |
| Dateiformat / Größe | PDF / 779 Kb |
| Dokumentensprache | Englisch |
FS8205 FO RT. r R ro U. ef pe NE. er rti. en es. y 10. Package Information 11. Revision History. Version. 1.0. 1.1. 1.2. 1.3. 1.4
Modelllinie für dieses Datenblatt
Textversion des Dokuments
FS8205 FO RT
P
r R ro U
ef pe NE
er rti
’
en es
ce
O
nl
y 10. Package Information 11. Revision History
Version
1.0
1.1
1.2
1.3
1.4
1.5 Page 2009/08/17
2010/01/26 3 2010/06/02
2010/06/10
2010/08/31
2010/04/27 3
4
3
4 2011/09/08
2011/11/02
2014/05/22
2016/08/22 6
3
2
3 Description Version 1.0 released
Rds25 TYP 28mohm MAX 36mohm
Rds45 TYP 22mohm MAX 26mohm
Rds45 TYP 23mohm MAX 27mohm
IDSS Test Conditions：VDS=16V VGS=0V
Revise Pin Assignment
Rds25 TYP：30mohm MAX：37mohm
Rds45 TYP：23mohm MAX：28mohm
VGS(th) MIN：0.45V MAX：1.2V
IGSS MAX：±0.1uA
Revise Package Outline
Revise Pin Assignment
Revised company address
Revise Package Marking Information Fo 1.6
1.7
1.8
1.9 Date Rev. 1.9 6/6
P
r R ro U
ef pe NE
er rti
’
en es
ce
O
nl
y 10. Package Information 11. Revision History
Version
1.0
1.1
1.2
1.3
1.4
1.5 Page 2009/08/17
2010/01/26 3 2010/06/02
2010/06/10
2010/08/31
2010/04/27 3
4
3
4 2011/09/08
2011/11/02
2014/05/22
2016/08/22 6
3
2
3 Description Version 1.0 released
Rds25 TYP 28mohm MAX 36mohm
Rds45 TYP 22mohm MAX 26mohm
Rds45 TYP 23mohm MAX 27mohm
IDSS Test Conditions：VDS=16V VGS=0V
Revise Pin Assignment
Rds25 TYP：30mohm MAX：37mohm
Rds45 TYP：23mohm MAX：28mohm
VGS(th) MIN：0.45V MAX：1.2V
IGSS MAX：±0.1uA
Revise Package Outline
Revise Pin Assignment
Revised company address
Revise Package Marking Information Fo 1.6
1.7
1.8
1.9 Date Rev. 1.9 6/6