Datasheet ZXTP56020FDBQ (Diodes) - 2

ZXTP56020FDBQ Absolute Maximum Ratings – Q1 & Q2
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -2 A Peak Pulse Collector Current ICM -3 A Base Current IB -300 mA Peak Base Current IBM -1 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
(Notes 6 & 8) 405 (Notes 6 & 9) 510 Power Dissipation PD mW (Notes 7 & 8) 1650 (Notes 7 & 9) 2470 (Notes 6 & 8) 308 (Notes 6 & 9) 245 Thermal Resistance, Junction to Ambient RJA °C/W (Notes 7 & 8) 76 (Notes 7 & 9) 51 Thermal Resistance, Junction to Lead (Note 10) RJL 18 °C/W Operating and Storage Temperature Range — TJ, TSTG -55 to +150 °C
ESD Ratings
(Note 11)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge – Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge – Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as note (6), except the device is mounted with the collector pad on 28mm x 28mm (8cm2) 2oz copper. 8. For a dual device with one active die. 9. For dual device with 2 active die running at equal power. 10. Thermal resistance from junction to solder-point (on the exposed collector pads). 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTP56020FDBQ 2 of 7 April 2017 Datasheet number: DS38567 Rev.1 - 2
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