Datasheet ZXTP56060FDBQ (Diodes) - 6

HerstellerDiodes
Beschreibung60V Dual PNP LOW VCE(sat) Transistor
Seiten / Seite8 / 6 — ZXTP56060FDBQ. Typical Electrical Characteristics. = 25°. I /I =100. amb. …
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ZXTP56060FDBQ. Typical Electrical Characteristics. = 25°. I /I =100. amb. v I. CE(SAT). www.diodes.com

ZXTP56060FDBQ Typical Electrical Characteristics = 25° I /I =100 amb v I CE(SAT) www.diodes.com

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ZXTP56060FDBQ Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.) 10 1
T
TA
= 25°
= 25
C I /I =100 amb
°C
C
B 1 150°C (V) (V) 25°C 125°C SAT SAT 0.1 Ic/Ib=100 Ic/Ib=50 0.1 V CE( V CE( Ic/Ib=10 -55°C 0.01 0.001 0.01 0.1 1 10 100 1000 10000 0.1 1 10 100 1000 I Collector Current (mA) C I Collector Current (mA) C
V v I V v I CE(SAT) C CE(SAT) C
ZXTP56060FDBQ 6 of 8 17 February 2020 Datasheet number: DS39605 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated Document Outline Mechanical Data Description This bipolar junction transistors (BJT) is designed to meet the stringent requirements of automotive applications. Features BVCEO > -60V Application Matrix LED Lighting Power Management Characteristic Characteristic Marking Information 2D9 YWX 2D9 = Product Type Marking Code Y = Year: 0~9 W = Week: A~Z: 1~26 week; a~z: 27~52 week; z represents 52 and 53 week X = A~Z: Internal code Package Outline Dimensions Suggested Pad Layout