Datasheet 1N4148, 1N4448 (Nexperia) - 4
| Hersteller | Nexperia |
| Beschreibung | High-speed diodes |
| Seiten / Seite | 10 / 4 — LIMITING VALUES. SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. Note. … |
| Revision | 09082004 |
| Dateiformat / Größe | PDF / 317 Kb |
| Dokumentensprache | Englisch |
LIMITING VALUES. SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. Note. ELECTRICAL CHARACTERISTICS. THERMAL CHARACTERISTICS. VALUE
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LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage − 100 V VR continuous reverse voltage − 100 V IF continuous forward current see Fig.2; note 1 − 200 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 4 A t = 1 ms − 1 A t = 1 s − 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 − 500 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VF forward voltage see Fig.3 1N4148 IF = 10 mA − 1 V 1N4448 IF = 5 mA 0.62 0.72 V IF = 100 mA − 1 V IR reverse current VR = 20 V; see Fig.5 25 nA VR = 20 V; Tj = 150 °C; see Fig.5 − 50 µA IR reverse current; 1N4448 VR = 20 V; Tj = 100 °C; see Fig.5 − 3 µA Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.6 − 4 pF t − rr reverse recovery time when switched from IF = 10 mA to 4 ns IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 V − fr forward recovery voltage when switched from IF = 50 mA; 2.5 V tr = 20 ns; see Fig.8
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-tp) thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth(j-a) thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W
Note
1. Device mounted on a printed-circuit board without metallization pad. 2004 Aug 10 3 Document Outline Features Applications Description Marking Ordering information Limiting values Electrical characteristics Thermal characteristics Graphical data Package outline Data sheet status Disclaimers
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage − 100 V VR continuous reverse voltage − 100 V IF continuous forward current see Fig.2; note 1 − 200 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 4 A t = 1 ms − 1 A t = 1 s − 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 − 500 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VF forward voltage see Fig.3 1N4148 IF = 10 mA − 1 V 1N4448 IF = 5 mA 0.62 0.72 V IF = 100 mA − 1 V IR reverse current VR = 20 V; see Fig.5 25 nA VR = 20 V; Tj = 150 °C; see Fig.5 − 50 µA IR reverse current; 1N4448 VR = 20 V; Tj = 100 °C; see Fig.5 − 3 µA Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.6 − 4 pF t − rr reverse recovery time when switched from IF = 10 mA to 4 ns IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 V − fr forward recovery voltage when switched from IF = 50 mA; 2.5 V tr = 20 ns; see Fig.8
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-tp) thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth(j-a) thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W
Note
1. Device mounted on a printed-circuit board without metallization pad. 2004 Aug 10 3 Document Outline Features Applications Description Marking Ordering information Limiting values Electrical characteristics Thermal characteristics Graphical data Package outline Data sheet status Disclaimers