Datasheet NV6123 (Navitas Semiconductor) - 4
| Hersteller | Navitas Semiconductor |
| Beschreibung | 650 V GaNFast Power IC |
| Seiten / Seite | 23 / 4 — NV6123. ESD Ratings. SYMBOL. PARAMETER. MAX. UNITS. Thermal Resistance. … |
| Dateiformat / Größe | PDF / 2.4 Mb |
| Dokumentensprache | Englisch |
NV6123. ESD Ratings. SYMBOL. PARAMETER. MAX. UNITS. Thermal Resistance. TYP. Final Datasheet. Rev Nov 22, 2019
Modelllinie für dieses Datenblatt
Textversion des Dokuments
NV6123 ESD Ratings SYMBOL PARAMETER MAX UNITS
HBM Human Body Model (per JS-001-2014) 1,000 V CDM Charged Device Model (per JS-002-2014) 1,000 V
Thermal Resistance SYMBOL PARAMETER TYP UNITS
R (6) Junction-to-Case 2.2 ºC/W ɵJC R (6) Junction-to-Ambient 40 ºC/W ɵJA (6) Rɵ measured on DUT mounted on 1 square inch 2 oz Cu (FR4 PCB)
Final Datasheet 4 Rev Nov 22, 2019
HBM Human Body Model (per JS-001-2014) 1,000 V CDM Charged Device Model (per JS-002-2014) 1,000 V
Thermal Resistance SYMBOL PARAMETER TYP UNITS
R (6) Junction-to-Case 2.2 ºC/W ɵJC R (6) Junction-to-Ambient 40 ºC/W ɵJA (6) Rɵ measured on DUT mounted on 1 square inch 2 oz Cu (FR4 PCB)
Final Datasheet 4 Rev Nov 22, 2019