Datasheet SiZF300DT (Vishay) - 4

SiZF300DT
www.vishay.com Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 100 10000 V = 10 V thru 4 V GS 80 80 ) 1000 1000 60 60 rrent (A ne ne rrent (A ine u ne ne ine u C C n 1st li n 2nd l 1st li 40 2nd li 2nd li 2nd l rai 40 rai T = 25 °C C D 100 D 100 - V = 3 V - GS I D I D 20 20 T = 125 °C C T = -55 °C C 0 10 0 10 0 0.5 1 1.5 2 0 1 2 3 4 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS 2nd line 2nd line
Output Characteristics Transfer Characteristics
Axis Title Axis Title 0.010 10000 1500 10000 ) 0.008 Ω 1200 Ciss ) F V = 4.5 V p GS 1000 1000 0.006 900 ce ( ne ne ne ine ne ine itan c n-Resistance ( 1st li a 2nd l C 1st li 0.004 2nd li 2nd li 2nd l oss O 600 - 100 Cap 100 - (on) V = 10 V C S GS D 0.002 300 R Crss 0 10 0 10 0 20 40 60 80 100 0 5 10 15 20 25 30 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS 2nd line 2nd line
On-Resistance vs. Drain Current Capacitance
Axis Title Axis Title 10 10000 1.8 10000 ) I = 7 A I = 7 A d) D D e (V liz 1.6 8 V = 15 V DS a V = 10 V GS ltage o 1000 1.4 1000 6 V = 7.5 V ne ne ne ine ne DS ine 1.2 ource V 1st li V = 4.5 V GS 1st li 2nd l 4 2nd li 2nd li 2nd l V = 24 V DS 100 Resistance (Norm 1.0 100 ate-to-S n- G O - 2 - 0.8 GS (on) V S DR 0 10 0.6 10 0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J 2nd line 2nd line
Gate Charge On-Resistance vs. Junction Temperature
S18-0479-Rev. A, 30-Apr-2018
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