Datasheet BLF974P (Ampleon) - 10
| Hersteller | Ampleon |
| Beschreibung | HF / VHF power LDMOS transistor |
| Seiten / Seite | 18 / 10 — BLF974P. HF / VHF power LDMOS transistor. 7.4.2 1-Tone CW. Fig 11. Power … |
| Dateiformat / Größe | PDF / 1.7 Mb |
| Dokumentensprache | Englisch |
BLF974P. HF / VHF power LDMOS transistor. 7.4.2 1-Tone CW. Fig 11. Power gain and drain efficiency as function of
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BLF974P HF / VHF power LDMOS transistor 7.4.2 1-Tone CW
amp01222 amp01223 27 90 26 Gp G ηD Gp G (dB) (dB) (dB) (%) (%) (%) (dB) (dB) (dB) 25 25 70 Gp G 24 23 50 23 (5) (5) (5) (4) (4) (4) 22 (3) (3) (3) ηD 21 30 (2) (2) (2) 21 (1) (1) (1) 19 10 20 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 PL (W) PL (W) VDS = 50 V; IDq = 2 50 mA; f = 225 MHz. IDq = 2 50 mA; f = 225 MHz. (1) VDS = 30 V (2) VDS = 35 V (3) VDS = 40 V (4) VDS = 45 V (5) VDS = 50 V
Fig 11. Power gain and drain efficiency as function of Fig 12. Power gain as a function of output power; output power; typical values typical values
BLF974P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 10 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 7.4.1 1-Tone CW pulsed 7.4.2 1-Tone CW 7.4.3 2-Tone CW 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
amp01222 amp01223 27 90 26 Gp G ηD Gp G (dB) (dB) (dB) (%) (%) (%) (dB) (dB) (dB) 25 25 70 Gp G 24 23 50 23 (5) (5) (5) (4) (4) (4) 22 (3) (3) (3) ηD 21 30 (2) (2) (2) 21 (1) (1) (1) 19 10 20 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 PL (W) PL (W) VDS = 50 V; IDq = 2 50 mA; f = 225 MHz. IDq = 2 50 mA; f = 225 MHz. (1) VDS = 30 V (2) VDS = 35 V (3) VDS = 40 V (4) VDS = 45 V (5) VDS = 50 V
Fig 11. Power gain and drain efficiency as function of Fig 12. Power gain as a function of output power; output power; typical values typical values
BLF974P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 26 March 2020 10 of 18
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Test circuit 7.4 Graphical data 7.4.1 1-Tone CW pulsed 7.4.2 1-Tone CW 7.4.3 2-Tone CW 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents