Datasheet AP61100Q, AP61102Q (Diodes) - 7

AP61100Q/AP61102Q Typical Performance Characteristics
(AP61100Q/AP61102Q @ TA = +25°C, VIN = 5V, VOUT = 1.8V, unless otherwise specified.) 0.606 High-Side MOSFET Low-Side MOSFET 0.604 160 0.602 150 0.600 140 130
)
0.598
Ω) V(
120
(m
0.596
FB
110
V
0.594
ON)(
100
DS
0.592
R
90 0.590 80 70 0.588 60 0.586 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature (°C) Temperature (°C) Figure 6. Power MOSFET RDS(ON) vs. Temperature Figure 7. VFB vs. Temperature
5.0 VIN Rising POR VIN Falling UVLO 4.5 2.20 4.0 2.15 3.5 2.10
A)
3.0
μ
2.05
( ) N
2.5 2.00
V( HD
2.0 1.95
I S NI V
1.90 1.5 1.85 1.0 1.80 0.5 1.75 0.0 1.70 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature (°C) Temperature (°C) Figure 8. ISHDN vs. Temperature Figure 9. VIN Power-On Reset and UVLO vs. Temperature
AP61100Q/AP61102Q 7 of 22 April 2020 Document number: DS42743 Rev. 1 - 2
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