Datasheet STX817A (STMicroelectronics) - 3
| Hersteller | STMicroelectronics |
| Beschreibung | PNP Medium power transistor |
| Seiten / Seite | 9 / 3 — STX817A. Electrical ratings. Table 1. Absolute maximum rating. Symbol. … |
| Dateiformat / Größe | PDF / 143 Kb |
| Dokumentensprache | Englisch |
STX817A. Electrical ratings. Table 1. Absolute maximum rating. Symbol. Parameter. Value. Unit. Table 2. Thermal data
Modelllinie für dieses Datenblatt
Textversion des Dokuments
STX817A Electrical ratings 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) -80 V VCEO Collector-emitter voltage (IB = 0) -80 V VEBO Emitter-base voltage (IC = 0) -5 V IC Collector current -1.5 A ICM Collector peak current (tP < 5ms) -2 A IB Base current -0.3 A IBM Base peak current (tP < 5ms) -0.6 A Ptot Total dissipation at Tamb = 25°C 0.9 W Tstg Storage temperature -65 to 150 °C TJ Max. operating junction temperature 150 °C
Table 2. Thermal data Symbol Parameter Value Unit
Rthj-amb Thermal resistance junction-amb __max 139 °C/W 3/9 Document Outline 1 Electrical ratings Table 1. Absolute maximum rating 2 Electrical characteristics Table 3. Electrical characteristics 3 Package mechanical data 4 Revision history Table 4. Revision history
VCBO Collector-base voltage (IE = 0) -80 V VCEO Collector-emitter voltage (IB = 0) -80 V VEBO Emitter-base voltage (IC = 0) -5 V IC Collector current -1.5 A ICM Collector peak current (tP < 5ms) -2 A IB Base current -0.3 A IBM Base peak current (tP < 5ms) -0.6 A Ptot Total dissipation at Tamb = 25°C 0.9 W Tstg Storage temperature -65 to 150 °C TJ Max. operating junction temperature 150 °C
Table 2. Thermal data Symbol Parameter Value Unit
Rthj-amb Thermal resistance junction-amb __max 139 °C/W 3/9 Document Outline 1 Electrical ratings Table 1. Absolute maximum rating 2 Electrical characteristics Table 3. Electrical characteristics 3 Package mechanical data 4 Revision history Table 4. Revision history