Datasheet PMEG120G30ELP (Nexperia) - 4

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Nexperia PMEG120G30ELP 120 V, 3 A Silicon Germanium (SiGe) rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit
V(BR)R reverse breakdown IR = 1 mA; pulsed; Tj = 25 °C [1] 120 - - V voltage VF forward voltage IF = 0.1 A; Tj = 25 °C; pulsed [1] - 570 660 mV IF = 0.5 A; Tj = 25 °C; pulsed [1] - 655 740 mV IF = 1 A; Tj = 25 °C; pulsed [1] - 700 780 mV IF = 2 A; Tj = 25 °C; pulsed [1] - 745 820 mV IF = 3 A; Tj = 25 °C; pulsed [1] - 770 840 mV IF = 3 A; Tj = -40 °C; pulsed [1] - 860 950 mV IF = 3 A; Tj = 125 °C; pulsed [1] - 630 730 mV IR reverse current VR = 120 V; Tj = 25 °C; pulsed [1] - 0.5 30 nA VR = 120 V; Tj = 125 °C; pulsed [1] - 5 60 µA VR = 120 V; Tj = 150 °C; pulsed [1] - 30 300 µA Cd diode capacitance VR = 1 V; f = 1 MHz; Tj = 25 °C - 103 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 41 - pF trr reverse recovery time IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A; - 6 - ns step recovery Tj = 25 °C reverse recovery time dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V; - 11 - ns ramp recovery Tj = 25 °C IRM peak reverse recovery - 0.6 - A current Qrr reverse recovery - 4 - nC charge VFRM peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C - 650 - mV voltage [1] Very short pulse, in order to maintain a stable junction temperature. PMEG120G30ELP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. Al rights reserved
Product data sheet 26 May 2020 4 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Mounting 15. Revision history 16. Legal information Contents