Datasheet DMN3012LEG (Diodes) - 2

DMN3012LEG Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Q1 Q2 Unit
Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±10 V T 20 C = +25C ID A TC = +70C 16 Continuous Drain Current @ VGS = 5V T 10 A = +25C ID A TA = +70C 8 Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 70 100 A Continuous Source-Drain Diode Current (Note 5) IS 2.7 3.2 A Avalanche Current (Note 6) L = 0.1mH IAS 34 50 A Avalanche Energy (Note 6) L = 0.1mH EAS 58 125 mJ HBM 300 V ESD Capability(Note 9) CDM 1000 V
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
T 2.2 Total Power Dissipation C = +25° C PD W TC = +70°C 1.4 Steady State 58 Thermal Resistance, Junction to Ambient (Note 5) RJA t<10s 36 °C/W Thermal Resistance, Junction to Case (Note 5) RJC 9.5 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics Q1
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) 1 — 2.1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 10.5 12 mΩ VGS = 5V, ID = 15A Diode Forward Voltage VSD — — 1.0 V VGS = 0V, IS = 15A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 650 850 V Output Capacitance Coss — 314 410 pF DS = 15V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss — 12 16 V Gate Resistance R DS = 0V, VGS = 0V, f = g — 1.63 3.3 Ω 1.0MHz Total Gate Charge (VGS = 4.5V) Qg — 4.7 6.1 Total Gate Charge at VTH Qg(TH) — 0.91 — nC VDS = 15V, ID = 15A Gate-Source Charge Qgs — 1.6 — Gate-Drain Charge Qgd — 0.9 — Turn-On Delay Time tD(ON) — 5.1 7.7 Turn-On Rise Time tR — 2.7 — V ns DD = 15V, VGS = 4.5V, Turn-Off Delay Time tD(OFF) — 6.4 9.6 ID = 15A, Rg = 2Ω Turn-Off Fall Time tF — 2.3 — Reverse Recovery Time tRR — 24.5 — ns IF = 15A, di/dt = 300A/μs Reverse Recovery Charge QRR — 8.3 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Based on characterization data only. Not subject to production testing. DMN3012LEG 2 of 10 March 2019 Document number: DS41633 Rev. 2 - 2
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