Datasheet STPS745 (STMicroelectronics) - 3
Hersteller | STMicroelectronics |
Beschreibung | Power Schottky rectifier |
Seiten / Seite | 14 / 3 — STPS745. Characteristics. 1.1. Characteristics (curves). Figure 1: … |
Dateiformat / Größe | PDF / 524 Kb |
Dokumentensprache | Englisch |
STPS745. Characteristics. 1.1. Characteristics (curves). Figure 1: Average forward power dissipation
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STPS745 Characteristics 1.1 Characteristics (curves) Figure 1: Average forward power dissipation Figure 2: Average forward current versus ambient versus average forward current temperature (δ= 0.5)
P IF(AV) (A) F(AV) (W) 6 9 δ = 0.1 δ = 0.2 δ = 0.5 8 Rth(j-a )=R th(j-c) TO-220 AC 5 δ = 0.05 7 TO-220F PAC 4 δ = 1 6 Rth(j-a) =15°C/W 5 3 4 Rth(j-a) =40°C/W 2 3 T T 2 1 1 IF(AV) (A) δ=tp/T tp δ=tp/T tp Tamb (°C) 0 0 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 175
Figure 4: Relative variation of thermal impedance Figure 3: Normalized avalanche power derating junction to case versus pulse duration (TO-220AC versus pulse duration (Tj= 125 °C) and D²PAK)
P (t ARM p) P (10 µs) ARM 1 Zth(j-c ) /Rth(j-c) 1.0 0.8 0.1 0.6 δ = 0.5 0.01 0.4 δ = 0.2 T 0.2 δ = 0.1 t (µs) p tp(s) 0.001 Single pulse δ=tp/T tp 0.0 1 10 100 1000 1E-4 1E-3 1E-2 1E-1 1E+0
Figure 5: Relative variation of thermal impedance Figure 6: Reverse leakage current versus reverse junction to case versus pulse duration voltage applied (typical values) (TO-220FPAC)
I ( R µA) Z th(j-c )/Rth(j-c) 5E+4 1.0 1E+4 Tj=150°C Tj=125°C 0.8 1E+3 Tj=100°C 0.6 Tj=75°C δ = 0.5 1E+2 Tj=50°C 0.4 1E+1 δ = 0.2 Tj=25°C T δ = 0.1 0.2 1E+0 t V ( R V) p(s) Single pulse δ=tp/T tp 1E-1 0.0 0 5 10 15 20 25 30 35 40 45 1E-3 1E-2 1E-1 1E+0 1E+1 DocID3516 Rev 8 3/14