Datasheet IRFZ46N (International Rectifier) - 4
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET, VDSS = 55 V, RDS(on) = 16.5 mΩ, ID = 30 A, TO-220AB |
| Seiten / Seite | 9 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Dateiformat / Größe | PDF / 116 Kb |
| Dokumentensprache | Englisch |
Fig 5. Fig 6. Fig 7. Fig 8
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IRFZ46N 20 3000 I VGS = 0V, f = 1MHz D = 28A ) C = C + C C SHORTED iss gs gd , ds V V = 44V DS C = C V = 27V rss gd DS 2500 C = C + C 16 V = 11V oss ds gd DS ltage ( Ciss o 2000 ce V 12 our 1500 S Coss -to- 8 te 1000 a C, Capacitance (pF) G Crss 4 500 , GS V FOR TEST CIRCUIT 0 SEE FIGURE 13 0 1 10 100 0 10 20 30 40 50 60 70 V , Drain-to-Source Voltage (V) DS Q , Total Gate Charge (nC) G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA ) A LIMITED BY R ) DS (on) ( A( t 100 rent n 100 er T = 175 C r J ° u C n Cur e ai cru 100µsec 10 o 10 e Dr S s - T = 25 C o J ° t- 1msec ni ar Rever D 1 1 , I , SD I D 10msec Tc = 25°C Tj = 175°C V = 0 V Single Pulse GS 0.1 0.1 0.2 0.7 1.2 1.7 2.2 1 10 100 V ,Source-to-Drain Voltage (V) SD VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA ) A LIMITED BY R ) DS (on) ( A( t 100 rent n 100 er T = 175 C r J ° u C n Cur e ai cru 100µsec 10 o 10 e Dr S s - T = 25 C o J ° t- 1msec ni ar Rever D 1 1 , I , SD I D 10msec Tc = 25°C Tj = 175°C V = 0 V Single Pulse GS 0.1 0.1 0.2 0.7 1.2 1.7 2.2 1 10 100 V ,Source-to-Drain Voltage (V) SD VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com