Datasheet AOK065V120X2 (Alpha & Omega) - 2
| Hersteller | Alpha & Omega |
| Beschreibung | 1200V αSiC Silicon Carbide Power MOSFET |
| Seiten / Seite | 9 / 2 — ALPHA & OMEGA. AOK065V120X2. Thermal Characteristics. Symbol. … |
| Dateiformat / Größe | PDF / 2.3 Mb |
| Dokumentensprache | Englisch |
ALPHA & OMEGA. AOK065V120X2. Thermal Characteristics. Symbol. Parameter. Units. Electrical Characteristics. Conditions. Min. Typ
Modelllinie für dieses Datenblatt
Textversion des Dokuments
ALPHA & OMEGA
S E M I C O N D U C T O R
AOK065V120X2 Thermal Characteristics Symbol Parameter AOK065V120X2 Units
RθJA Maximum Junction-to-Ambient (E,F) 40 °C/W RθJC Maximum Junction-to-Case (G) 0.8 °C/W
Electrical Characteristics
(T
A
= 25°C, unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units STATIC
V ID=250µA, VGS=0V, TJ=25°C 1200 V (BR)DSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=150°C 1200 V IDSS Zero Gate Voltage Drain Current VDS=1200V, VGS=0V, TJ=150°C 1 µA IGSS Gate-Source Leakage Current VDS=0V, VGS=+15/-5V ±100 nA VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA 1.8 2.8 3.5 V R TJ = 25°C 65 85 mΩ DS(ON) Static Drain-Source On-Resistance VGS=15V, ID=20A TJ= 150°C 90 mΩ gfs Forward Transconductance VDS=20V, ID=20V 12 S VSD Diode Forward Voltage IS=10A,VGS=-5V 4.1 5 V
DYNAMIC
Ciss Input Capacitance 1716 pF Coss Output Capacitance 71 pF VGS=0V, VDS=800V, f=1MHz Crss Reverse Transfer Capacitance 5 pF Eoss Coss Stored Energy 30 µJ RG Gate Resistance f=1MHz 2.5 Ω
SWITCHING
Qg Total Gate Charge 62.3 nC Qgs Gate Source Charge VGS=-5/+15V, VDS=800V, ID=20A 23.1 nC Qgd Gate Drain Charge 23.7 nC td(on) Turn-On DelayTime 14.6 ns tr Turn-On Rise Time VGS=0V/+15V, VDS=800V, 36.2 ns td(off) Turn-Off DelayTime 20.8 ns ID=20A, RG=5Ω tf Turn-Off Fall Time 10.2 ns E La = 120µH on Turn-On Energy 325 µJ Eoff Turn-Off Energy FWD: AOK065V120X2 23 µJ Etot Total Switching Energy 348 µJ trr Body Diode Reverse Recovery Time 27 ns I IF=20A,dI/dt=1560A/us, rm Peak Reverse Recovery Current V 10 A DS=800V Qrr Body Diode Reverse Recovery Charge 155 nC
Notes:
with TA =25°C. A. < 1% duty cycle, f >1Hz F. The RθJA is the sum of the thermal impedance from junction to case RθJC B. Device can be operated at VGS=0/15V. Actual operating VGS will de- and case to ambient. pend on application specifics such as parasitic inductance and dV/dt but G. The value of RθJC is measured with the device mounted to a large heat- should not exceed maximum ratings. sink, assuming a maximum junction temperature of TJ(MAX)=175°C. C. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to- H. The static characteristics in Figures 1 to 8 are obtained using <300ms case thermal resistance, and is more useful in setting the upper dissipa- pulses, duty cycle 0.5% max. tion limit for cases where additional heatsinking is used. I. These curves are based on RθJC which is measured with the device D. L=5mH, IAS=4.3A, RG=25Ω, Starting TJ=25°C. mounted to a large heatsink, assuming a maximum junction tempera- E. The value of RθJA is measured with the device in a still air environment ture of TJ(MAX) =175°C.The SOA curve provides a single pulse rating. Rev. 1.0 March 2020
www.aosmd.com
Page 2 of 9
S E M I C O N D U C T O R
AOK065V120X2 Thermal Characteristics Symbol Parameter AOK065V120X2 Units
RθJA Maximum Junction-to-Ambient (E,F) 40 °C/W RθJC Maximum Junction-to-Case (G) 0.8 °C/W
Electrical Characteristics
(T
A
= 25°C, unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units STATIC
V ID=250µA, VGS=0V, TJ=25°C 1200 V (BR)DSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=150°C 1200 V IDSS Zero Gate Voltage Drain Current VDS=1200V, VGS=0V, TJ=150°C 1 µA IGSS Gate-Source Leakage Current VDS=0V, VGS=+15/-5V ±100 nA VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA 1.8 2.8 3.5 V R TJ = 25°C 65 85 mΩ DS(ON) Static Drain-Source On-Resistance VGS=15V, ID=20A TJ= 150°C 90 mΩ gfs Forward Transconductance VDS=20V, ID=20V 12 S VSD Diode Forward Voltage IS=10A,VGS=-5V 4.1 5 V
DYNAMIC
Ciss Input Capacitance 1716 pF Coss Output Capacitance 71 pF VGS=0V, VDS=800V, f=1MHz Crss Reverse Transfer Capacitance 5 pF Eoss Coss Stored Energy 30 µJ RG Gate Resistance f=1MHz 2.5 Ω
SWITCHING
Qg Total Gate Charge 62.3 nC Qgs Gate Source Charge VGS=-5/+15V, VDS=800V, ID=20A 23.1 nC Qgd Gate Drain Charge 23.7 nC td(on) Turn-On DelayTime 14.6 ns tr Turn-On Rise Time VGS=0V/+15V, VDS=800V, 36.2 ns td(off) Turn-Off DelayTime 20.8 ns ID=20A, RG=5Ω tf Turn-Off Fall Time 10.2 ns E La = 120µH on Turn-On Energy 325 µJ Eoff Turn-Off Energy FWD: AOK065V120X2 23 µJ Etot Total Switching Energy 348 µJ trr Body Diode Reverse Recovery Time 27 ns I IF=20A,dI/dt=1560A/us, rm Peak Reverse Recovery Current V 10 A DS=800V Qrr Body Diode Reverse Recovery Charge 155 nC
Notes:
with TA =25°C. A. < 1% duty cycle, f >1Hz F. The RθJA is the sum of the thermal impedance from junction to case RθJC B. Device can be operated at VGS=0/15V. Actual operating VGS will de- and case to ambient. pend on application specifics such as parasitic inductance and dV/dt but G. The value of RθJC is measured with the device mounted to a large heat- should not exceed maximum ratings. sink, assuming a maximum junction temperature of TJ(MAX)=175°C. C. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to- H. The static characteristics in Figures 1 to 8 are obtained using <300ms case thermal resistance, and is more useful in setting the upper dissipa- pulses, duty cycle 0.5% max. tion limit for cases where additional heatsinking is used. I. These curves are based on RθJC which is measured with the device D. L=5mH, IAS=4.3A, RG=25Ω, Starting TJ=25°C. mounted to a large heatsink, assuming a maximum junction tempera- E. The value of RθJA is measured with the device in a still air environment ture of TJ(MAX) =175°C.The SOA curve provides a single pulse rating. Rev. 1.0 March 2020
www.aosmd.com
Page 2 of 9