Preliminary Datasheet ZHB6790 (Diodes) - 3

ZHB6790 PNP TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V(BR)CBO -50 V IC=-100µA Voltage Collector-Emitter V(BR)CEO -40 V IC=-10mA* Breakdown Voltage Emitter-Base Breakdown V(BR)EBO -5 V IE=-100µA Voltage Collector Cutoff Current ICBO -0.1 µA VCB=-30V Emitter Cutoff Current IEBO -0.1 µA VEB=-4V Collector-Emitter VCE(sat) -0.14 V IC=-100mA, IB=-0.5mA* Saturation Voltage -0.25 V IC=-500mA, IB=-5mA* -0.45 V IC=-1A, IB=-10mA* -0.75 V IC=-2A, IB=-50mA* Base-Emitter VBE(sat) -1.0 V IC=-1A, IB=-10mA* Saturation Voltage Base-Emitter VBE(on) -0.75 V IC=-1A, VCE=-2V* Turn-On Voltage Static Forward Current hFE 300 IC=-100mA, VCE=-2V Transfer Ratio 200 IC=-1A, VCE=-2V* 150 IC=-2A, VCE=-2V* Transition Frequency fT 100 MHz IC=-50mA, VCE=-5V f=50MHz Input Capacitance Cibo 225 pF VEB=-0.5V, f=1MHz Output Capacitance Cobo 24 pF VCB=-10V, f=1MHz Switching Times ton 35 ns IC=-500mA, toff 600 IB1= -50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.