Datasheet STB11NM60T4, STP11NM60 (STMicroelectronics) - 4

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STB11NM60T4, STP11NM60 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 11 A I (1) SDM Source-drain current (pulsed) - 44 A V (2) SD Forward on voltage VGS = 0 V, ISD = 11 A - 1.5 V trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, - 390 ns Q V rr Reverse recovery charge DD = 100 V - 3.8 μC (see Figure 13. Test circuit for I inductive load switching and diode RRM Reverse recovery current - 19.5 A recovery times) trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, - 570 ns Q V rr Reverse recovery charge DD = 100 V, Tj = 150 °C - 5.7 μC (see Figure 13. Test circuit for I inductive load switching and diode RRM Reverse recovery current - 20 A recovery times) 1. Pulse width is limited by safe operating area 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%
DS3653
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Rev 7 page 4/21
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 D²PAK (TO-263) type A package information 4.2 D²PAK packing information 4.3 D²PAK (TO-263) type B package information 4.4 D²PAK type B packing information 4.5 TO-220 type A package information Revision history