Datasheet IXTY02N50D, IXTU02N50D, IXTP02N50D (Littelfuse) - 2

IXTY02N50D IXTU02N50D IXTP02N50D Symbol Test Conditions Characteristic Values
(T = 25C, Unless Otherwise Specified)
Min. Typ. Max.
J
g
V = 50V, I = 200mA, Note 1 100 150 mS
fs
DS D
C
120 pF
iss C
V = -10V, V = 25V, f = 1MHz 25 pF
oss
GS DS
C
5 pF
rss t
9 ns
d(on) Resistive Switching Times t
4 ns
r
V = 5V, V = 100V, I = 50mA
t
GS DS D 28 ns
d(off)
R = 30 (External)
t
G 45 ns
f R
5.0 C/W
thJC R
TO-220 0.50 C/W
thCS Source-Drain Diode Symbol Test Conditions Characteristic Values
(T = 25C, Unless Otherwise Specified)
Min. Typ. Max.
J
V
I = 200mA, V = -10V, Note 1 0.7 1.5 V
SD
F GS
t
I = 750mA, -di/dt = 100A/s F 1.0 μs
rr
V = 25V, V = -10V R GS Note 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537