Datasheet AUIRLR014N (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | Automotive Grade |
| Seiten / Seite | 10 / 4 — Fig 5. Fig 6. Fig. 7. Fig 8 |
| Dateiformat / Größe | PDF / 415 Kb |
| Dokumentensprache | Englisch |
Fig 5. Fig 6. Fig. 7. Fig 8
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Textversion des Dokuments
AUIRLR014N 500 15 ID = 6 A ) V V = 44V DS C VGS = 0V, f = 1MHz C = C + C C SHORTED iss gs gd , ds C = C rss gd 400 C = C + C oss ds gd iss V = 27V DS oltage ( 10 300 ance (pF) Coss ource V acit 200 -to-S C, Cap 5 ate Crss 100 , G GS V FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 100 0 2 4 6 8 10 V , Drain-to-Source Voltage (V) DS Q , Total Gate Charge (nC) G
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) t (A) 100 ) A urren 10 t ( 10us T = 175 C J ° en rain C urr D 10 n C 100us Drai 1 everse , I D 1ms 1 , R 10ms I SD T = 25 °C C T = 25 C T = 175 °C J ° J V = 0 V GS Single Pulse 0.1 0.1 0.2 0.6 1.0 1.4 1.8 1 10 100 V ,Source-to-Drain Voltage (V) SD V , Drain-to-Source Voltage (V) DS
Fig. 7
Typical Source-to-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 2015-12-11
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) t (A) 100 ) A urren 10 t ( 10us T = 175 C J ° en rain C urr D 10 n C 100us Drai 1 everse , I D 1ms 1 , R 10ms I SD T = 25 °C C T = 25 C T = 175 °C J ° J V = 0 V GS Single Pulse 0.1 0.1 0.2 0.6 1.0 1.4 1.8 1 10 100 V ,Source-to-Drain Voltage (V) SD V , Drain-to-Source Voltage (V) DS
Fig. 7
Typical Source-to-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 2015-12-11