Datasheet IRLR024NPbF, IRLU024NPbF (Infineon) - 7
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 11 / 7 — Peak Diode Recovery dv/dt Test Circuit. D.U.T. Fig 14 |
| Dateiformat / Größe | PDF / 316 Kb |
| Dokumentensprache | Englisch |
Peak Diode Recovery dv/dt Test Circuit. D.U.T. Fig 14
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRLR/U024NPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - RG • dv/dt controlled by R + G • Driver same type as D.U.T. - VDD • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test Driver Gate Drive P.W. Period D = P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 14.
For N-Channel HEXFET® MOSFETs www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - RG • dv/dt controlled by R + G • Driver same type as D.U.T. - VDD • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test Driver Gate Drive P.W. Period D = P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 14.
For N-Channel HEXFET® MOSFETs www.irf.com 7