Datasheet PSMN0R9-25YLC (Nexperia) - 3

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Nexperia PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 4. Limiting values Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 25 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 25 V VGS gate-source voltage -20 20 V ID drain current Tmb = 25 °C; see Figure 1 [1] - 100 A Tmb = 100 °C; see Figure 1 [1] - 100 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; - 1563 A see Figure 4 Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 272 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C VESD electrostatic discharge voltage MM (JEDEC JESD22-A115) 920 - V
Source-drain diode
IS source current Tmb = 25 °C [1] - 100 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1563 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; - 342 mJ avalanche energy Vsup ≤ 25 V; unclamped; RGS = 50 Ω; see Figure 3 [1] Continuous current is limited by package 003a a f 521 03na19 400 120 ID (A) Pder 320 (%) 80 240 160 40 (1) 80 0 0 0 50 100 150 200 0 50 100 150 200 Tmb (C) Tmb (°C)
Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature
PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 2 — 4 July 2011 3 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents