Preliminary Datasheet HAT2169N (Renesas) - 2

HAT2169N Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 40 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 40 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, I D = 1 mA Static drain to source on state RDS(on) — 3.1 3.8 mΩ ID = 25 A, VGS = 10 V Note4 resistance RDS(on) — 4.3 6.3 mΩ ID = 25 A, VGS = 4.5 V Note4 Forward transfer admittance |yfs| 39 65 — S ID = 25 A, VDS = 10 V Note4 Input capacitance Ciss — 6650 — pF VDS = 10 V Output capacitance Coss — 890 — pF VGS = 0 f = 1 MHz Reverse transfer capacitance Crss — 360 — pF Gate Resistance Rg — 0.5 — Ω Total gate charge Qg — 45 — nc VDD = 10 V Gate to source charge Qgs — 21 — nc VGS = 4.5 V I Gate to drain charge Qgd — 10 — nc D = 50 A Turn-on delay time td(on) — 15 — ns VGS = 10 V, ID = 25 A Rise time t V r — 64 — ns DD ≅ 10 V R Turn-off delay time t L = 0.4 Ω d(off) — 55 — ns Rg = 4.7 Ω Fall time tf — 9.5 — ns Body–drain diode forward voltage VDF — 0.83 1.08 V IF = 50 A, VGS = 0 Note4 Body–drain diode reverse recovery trr — 40 — ns IF = 50 A, VGS = 0 time diF/ dt = 100 A/ µs Notes: 4. Pulse test Rev.0.01, May.29.2005, page 2 of 3 Document Outline 161-HAT2169H HAT2169N Features Outline Absolute Maximum Ratings Electrical Characteristics Package Dimensions