Datasheet HAT2169H (Renesas) - 5

HAT2169H Main Characteristics
Power vs. Temperature Derating Maximum Safe Operation Area 500 ID (A) 100
30 Drain Current Channel Dissipation Pch (W) 40 20 10 0 50 100 150 Case Temperature 1m
PW
s
DC = 1
Op 0 m
s
era
tio
n 10 1 Operation in
this area is
limited by RDS(on) 0.1 0.01
0.1 200 1 3 10 30 100 VDS (V) 100 Pulse Test VDS = 10 V
Pulse Test 3.6 V
3.4 V 60 80 60
3.2 V 40 VGS = 3.0 V 20 Drain Current Drain Current 0.3 Typical Transfer Characteristics ID (A) ID (A) 80 10 V
4.5 V
3.8 V Tc = 25°C
1 shot Pulse Drain to Source Voltage Tc (°C) Typical Output Characteristics
100 10
µs
0µ
s 10 Tc = 75°C
40 20 25°C
–25°C 0 2 4 6 8 Drain to Source Voltage 0 10 200 150 ID = 50 A 100
20 A 50 10 A 0 4 8 12 Gate to Source Voltage Rev.4.00 Sep 20, 2005 page 3 of 7 16 20 VGS (V) 6 10 8 VGS (V) Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test 4 Gate to Source Voltage VDS (V) 250 2 100
Pulse Test
30
10
VGS = 4.5 V
3
10 V
1
0.3
0.1
1 3 10 30 Drain Current 100 300 ID (A) 1000