Datasheet CMPD2836E, CMPD2838E (Central Semiconductor)

CMPD2836E CMPD2838E
ENHANCED SPECIFICATION
w w w. c e n t ra l s e m i . c o m SURFACE MOUNT DESCRIPTION: DUAL, SILICON
The CENTRAL SEMICONDUCTOR CMPD2836E and
SWITCHING DIODES
CMPD2838E are Enhanced versions of the CMPD2836 and CMPD2838 High Speed Switching Diodes. These devices are manufactured by the epitaxial planar process, in an epoxy molded surface mount SOT-23 package, designed for high speed switching applications.
FEATURED ENHANCED SPECIFICATIONS:
♦ BVR from 75V min to 120V min.
SOT-23 CASE
♦ VF from 1.2V max to 1.0V max. The following configurations are available: CMPD2836E DUAL, COMMON ANODE
MARKING CODE: CA2E
CMPD2838E DUAL, COMMON CATHODE
MARKING CODE: CA6E MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
♦
Peak Repetitive Reverse Voltage VRRM 120 V
Average Forward Current IO 200 mA Peak Forward Current, tp=1.0s IFM 300 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
♦
IR VR=80V 100 nA
♦
BVR IR=100µA 120 150 V
♦
VF IF=10mA 0.72 0.85 V
♦
VF IF=50mA 0.84 0.95 V
♦
VF IF=100mA 0.92 1.0 V
CT VR=0, f=1.0MHz 1.5 4.0 pF trr IR=IF=10mA, RL=100Ω, Rec. to 1.0mA 4.0 ns ♦ Enhanced specification R3 (25-January 2010)