Datasheet PHK12NQ03LT (Nexperia) - 6

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Philips Semiconductors PHK12NQ03LT N-channel TrenchMOS™ logic level FET 6. Characteristics Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V 30 - - V VGS(th) gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C; Figure 9 1 - 2 V IDSS drain-source leakage current VDS = 24 V; VGS = 0 V Tj = 25 °C - - 1 µA Tj = 100 °C - - 5 µA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V - 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 10 A; Figure 8 - 11 14 mΩ VGS = 10 V; ID = 12 A; Figure 8 - 8.9 10.5 mΩ
Dynamic characteristics
gfs forward transconductance VDS = 15 V; ID = 10 A; - 34 - S Qg(tot) total gate charge ID = 15 A; VDD = 16 V; VGS = 5 V; Figure 13 - 17.6 - nC Qgs gate-source charge - 4 - nC Qgd gate-drain (Miller) charge - 4.4 - nC Ciss input capacitance VGS = 0 V; VDS = 16 V; f = 1 MHz; Figure 11 - 1335 - pF Coss output capacitance - 391 - pF Crss reverse transfer capacitance - 190 - pF td(on) turn-on delay time VDD = 16 V; RD = 10 Ω; VGS = 10 V - 10.6 - ns tr rise time - 11.7 - ns td(off) turn-off delay time - 37 - ns tf fall time - 19 - ns
Source-drain (reverse) diode
VSD source-drain (diode forward) voltage IS = 1 A; VGS = 0 V; Figure 12 - 0.7 1.0 V trr reverse recovery time IS = 2.3 A; dIS/dt = −100 A/µs; VGS = 0 V - 70 - ns 9397 750 12955 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data Rev. 02 — 02 March 2004 5 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 5.1 Transient thermal impedance 6. Characteristics 7. Package outline 8. Revision history 9. Data sheet status 10. Definitions 11. Disclaimers 12. Trademarks