Datasheet AIM702H50B (Alpha & Omega) - 3

AIM702H50B Absolute Maximum Ratings
(TJ=25°C, unless otherwise specified)
Symbol Parameter Conditions Ratings Units Inverter
BVDSS MOSFET Breakdown Voltage 500 V T I C=25°C 1.5 A D MOSFET Drain Current (Continuous) TC=80°C 0.85 A IDP MOSFET Drain Current (Pulsed) TC=25°C, <100µs pulse width 2.25 A PD Maximum Power Dissipation TC=25°C 8 W TJ Operating Junction Temperature -40 to 150 °C
Control (Protection)
VCC Control Supply Voltage Applied between VCC-COM 20 V VBS High-Side Control Bias Voltage Applied between VB(U)-U, VB(V)-V, VB(W)-W 20 V Applied between IN V (UH), IN(VH), IN(WH), IN(UL), IN Input Voltage V IN CC±0.5 V (VL), IN(WL)-COM VOT Temperature Output Applied between VOT-COM 5±0.5 V
Thermal Resistance
Rth(j-c) Junction to Case Thermal Resistance Each MOSFET 12.5 °C/W Rth(j-a) Junction to ambient thermal resistance All operating condition 39 °C/W
Total System
Measurement point of T T C is provided in C Module Case Operation Temperature -30 to 125 °C Figure 2 TSTG Storage Temperature -40 to 150 °C 60Hz, sinusoidal, AC 1min, between VISO Isolation Voltage 1500 V connected all pins and heat sink plate rms Power pins TC point XXmm XXmm Control pins
Figure 2. TC Measurement Point Recommended Operation Conditions Symbol Parameter Conditions Min. Typ. Max Units
VPN Bus Supply Voltage Applied between P-N 0 300 400 V VCC Control Supply Voltage Applied between VCC-COM 13.5 15.0 16.5 V VBS High-Side Bias Voltage Applied between VB(U)-U, VB(V)-V, VB(W)-W 13.5 15.0 16.5 V dVCC/dt, Control Supply Variation -1 - 1 V/us dVBS/dt Arm Shoot-Through Blocking tdead For each input signal 1.5 - - µs Time fPWM PWM Input Frequency -40°C < TJ < 150°C - 16 - kHz PWIN(ON) 0.7 - - µs Minimum Input Pulse Width (1) PWIN(OFF) 0.7 - - µs
Note:
1. IPM may not respond if the input pulse width is less than PWIN(ON), PWIN(OFF). Rev.1.2 January 2020
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