Datasheet IRLB8721PbF (Infineon) - 3
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 9 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Dateiformat / Größe | PDF / 274 Kb |
| Dokumentensprache | Englisch |
Fig 1. Fig 2. Fig 3. Fig 4
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IRLB8721PbF 1000 1000 VGS VGS TOP 10V TOP 10V ) A 9.0V ) 9.0V ( 7.0V A t ( 7.0V n 5.5V t 5.5V e n r 4.5V 4.5V r er u 100 4.0V ru 100 4.0V C 3.5V C 3.5V e BOTTOM 3.0V BOTTOM 3.0V c e r c u r o u S o - S o - t- ot n - i 10 n a i 10 3.0V r ar D , D , I D 3.0V I D ≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH Tj = 25°C Tj = 175°C 1 1 0.1 1 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 ecn ID = 25A ) a A t V ( s GS = 10V t is n 100 e err R u n C 1.5 O e e ) c d r cr e u 10 u z o o il S a - S- o T m t J = 175°C o r - t- o ni T ni N a ( r J = 25°C ar 1.0 D 1 D , ) I D V n DS = 15V o( ≤ 60μs PULSE WIDTH S D 0.1 R 0.5 0.0 2.0 4.0 6.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 ecn ID = 25A ) a A t V ( s GS = 10V t is n 100 e err R u n C 1.5 O e e ) c d r cr e u 10 u z o o il S a - S- o T m t J = 175°C o r - t- o ni T ni N a ( r J = 25°C ar 1.0 D 1 D , ) I D V n DS = 15V o( ≤ 60μs PULSE WIDTH S D 0.1 R 0.5 0.0 2.0 4.0 6.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature www.irf.com 3