Datasheet BLP05H9S500P (Ampleon) - 10

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BLP05H9S500P Power LDMOS transistor 9. Handling information CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
Table 10. ESD sensitivity ESD model Class
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2A [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2] [1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V. [2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V.
10. Abbreviations Table 11. Abbreviations Acronym Description
CW Continuous Wave ESD ElectroStatic Discharge ISM Industrial, Scientific and Medical LDMOS Laterally Diffused Metal-Oxide Semiconductor MTF Median Time to Failure RoHS Restriction of Hazardous Substances VSWR Voltage Standing Wave Ratio
11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes
BLP05H9S500P v.1 20190910 Product data sheet - - BLP05H9S500P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2019. All rights reserved.
Product data sheet Rev. 1 — 10 September 2019 10 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Application circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents